Janusz Balicki

Bio: Janusz Balicki is an academic researcher from Fairchild Semiconductor International, Inc.. The author has contributed to research in topics: Noise (electronics) & Image sensor. The author has an hindex of 7, co-authored 8 publications receiving 236 citations.

Low-noise readout using active reset for CMOS APS

Abstract: Pixel reset noise sets the fundamental detection limit on photodiode based CMOS image sensors. Reset noise in standard active pixel sensor (APS) is well understood and is of order kT/C. In this paper we present a new technique for resetting photodiodes, called active reset, which reduces reset noise without adding lag. Active reset can be applied to standard APS. Active reset uses bandlimiting and capacitive feedback to reduce reset noise. This paper discusses the operation of an active reset pixel, and presents an analysis of lag and noise. Measured results from a 6 transistor per pixel 0.35 micrometers CMOS implementation are presented. Measured results show that reset noise can be reduced to less than kT/18C using active reset. We find that theory simulation and measured results all match closely.

A 5.5Mpixel 100 frames/sec wide dynamic range low noise CMOS image sensor for scientific applications

Abstract: In this paper we describe a 55Mpixel 100 frames/sec wide-dynamic-range low-noise CMOS image sensor (CIS) designed for scientific applications The sensor has 65μm pitch 5T pixels with pinned photodiodes and integrated microlenses The 5T pixel architecture enables low noise rolling and global shutter operation The measured peak quantum efficiency of the sensor is greater than 55% at 550nm, the Nyquist MTF is greater than 04 at 550nm, and the linear full well capacity is greater than 35ke- The measured rolling and global shutter readout noise are 128e- RMS and 254e- RMS respectively at 30 f/s and 20°C The pinned photodiode dark current is less than 38pA/cm2 at 20°C The sensor achieves an intra-scene linear dynamic range in rolling shutter operation of greater than 86dB (20000:1) at room temperature In global shutter readout the shutter efficiency is greater than 1000:1 with 500nm illumination

Low-FPN high-gain capacitive transimpedance amplifier for low-noise CMOS image sensors

Abstract: In this paper we introduce a low fixed pattern noise (LFPN) capacitive transimpedance amplifier (CTIA) for active pixel CMOS image sensors (APS) with high switchable gain and low read noise. The LFPN CTIA APS uses a switched capacitor voltage divider feedback circuit to achieve high sensitivity, low gain FPN, and low read noise. This paper discusses the operation of the LFPN CTIA APS, and presents a theoretical analysis of its gain FPN and read noise. We do not analyze the effect of 1/f noise, since it is typically much smaller than the thermal and shot noise effects. Monte Carlo simulation of gain FPN and SPICE simulation of read noise are also presented. For a 0.35 micrometers CMOS LFPN CTIA at room temperature and an output data rate of 16Mpixel/sec, we show that the pixel amplifier gain FPN is less than 0.0064, where FPN is defined as the ratio of standard deviation to mean. The read noise and dynamic range are less than 3 electrons RMS and greater than 90dB respectively. We find that theory and simulated results match closely.

Wide Dynamic Range Low Light Level CMOS Image Sensor

Abstract: This paper describes a CMOS image sensor technology suitable for the next generation of scientific cameras. We describe a prototype sensor with 320x240 pixels based on this technology. The sensor features 8 different types of 5T pixels with pinned photodiodes. All of the pixels have a 6.5um pitch and include an integrated micro-lens. The measured peak quantum efficiency of the sensor is greater than 50% at 550nm, and the read noise is less than 1e- RMS at room temperature. The linear full well capacity is greater than 40ke-, the dark current is less than 3.8pA/cm 2 at 20°C, and the MTF at 77 lp/mm is 0.4 at 600nm. The sensor also achieves an intra-scene linear dynamic range of greater than 92dB (40000:1) at room temperature.

An ultralow-noise high-speed CMOS linescan sensor for scientific and industrial applications

Abstract: This paper describes a 2048x1 linear image sensor implemented in a 0.35 μm 4M1P CMOS process that uses a low fixed pattern noise capacitive transimpedance amplifier (LFPN CTIA) pixel architecture. The pixel also includes circuitry for reducing 1/f noise, correlated double sampling, electronic shuttering, and a horizontal anti-blooming drain. High speed non-destructive readout of the sensor is achieved by using a hierarchical readout structure with two output ports. Using a JTAG interface the sensor can be programmed to operate in multiple readout modes. In the fastest readout mode, ROI, the sensor achieves 90Mpixel/sec (43.4Klines/sec) with 14e- RMS read noise. In the lowest noise mode, MRDI, with 13x oversampling of each pixel the sensor achieves 2.7Klines/sec with 1.2e- RMS read noise.

Recent Progress and Future Prospects of 2D-based Photodetectors

Abstract: Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and CMOS-incompatibility. New emerging 2D materials such as graphene, TMDs and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from visible to far infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light detection capabilities. Notably the facile integration of 2D-photodetectors on silicon photonics or CMOS platforms paves the way towards high performance, low-cost, broadband sensing and imaging modalities.

Filter-Free Image Sensor Pixels Comprising Silicon Nanowires with Selective Color Absorption

Abstract: The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency.

Detection of visible photons in CCD and CMOS: A comparative view

Abstract: CCD and CMOS detectors each have strengths and weaknesses coming from their architecture or their fabrication process. This paper reviews their key architectural and technological differences that impact the photon detection performances and gives the future directions for CMOS detectors evolution.

Sensitivity of CMOS based imagers and scaling perspectives

Abstract: CMOS based imagers are beginning to compete against CCDs in many areas of the consumer market because of their system-on-a-chip capability. Sensitivity, however, is a main weakness of CMOS imagers and enhancements and deviations from standard CMOS processes are necessary to keep up sensitivity with downscaled process generations. In the introductory section several definitions for the sensitivity of image sensors are reviewed with regard to their potential to allow meaningful comparison of different detector structures. In the main section, the standard CMOS sensor architecture is compared to detector structures designed to improve the sensitivity, namely the photogate (PG), the pinned photodiode (PPD) and the thin film on ASIC (TFA) approach. The latter uses a vertical integration of the photodiode on top of the pixel transistors. A careful analysis of the relevant electrical, optical and technological parameters and many previously published experimental data for different imagers reveals that only the PPD and the TFA enhancements provide satisfactory sensitivity and withstand scaling down to 0.18 /spl mu/ processes. Due to the higher fill factor and the higher quantum efficiency TFA provides significantly better values than PPD. The radiometric sensitivity of a 5 /spl mu/m/spl times/5 /spl mu/m TFA pixel is found to amount to 11.9 V/(/spl mu//cm/sup 2/) for a 0.25 /spl mu/m process and 27.5 V/(/spl mu/J/cm/sup 2/) for a 0.18 /spl mu/m process.