J
Jatin K. Rath
Researcher at Utrecht University
Publications - 45
Citations - 2189
Jatin K. Rath is an academic researcher from Utrecht University. The author has contributed to research in topics: Solar cell & Thin film. The author has an hindex of 17, co-authored 45 publications receiving 1945 citations. Previous affiliations of Jatin K. Rath include Indian Institute of Technology Madras.
Papers
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Upconverter solar cells: materials and applications
TL;DR: In this paper, upconverter materials may be combined with quantum dots or plasmonic particles to enhance the upconversion efficiency and improve the feasibility of applying up-converters in commercial solar cells.
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Enhanced near-infrared response of a-Si:H solar cells with β-NaYF4:Yb3+ (18%), Er3+ (2%) upconversion phosphors
TL;DR: In this paper, a near-infrared to visible upconversion phosphor (β-NaYF4:Yb3+ (18%), Er3+(2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation.
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Flexible CIGS, CdTe and a-Si:H based thin film solar cells: A review
Jeyakumar Ramanujam,Jeyakumar Ramanujam,Douglas M. Bishop,Teodor K. Todorov,Oki Gunawan,Jatin K. Rath,Reza Nekovei,Elisa Artegiani,Alessandro Romeo +8 more
TL;DR: In this article, a review of recent developments in flexible CIGS, CdTe, and a-Si:H solar cells is presented, and the current challenges and solutions to those challenges of using flexible foils, and industrial scenario are reviewed in detail.
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Upconversion in solar cells
Wilfried van Sark,Jessica de Wild,Jatin K. Rath,Andries Meijerink,Ruud E. I. Schropp,Ruud E. I. Schropp,Ruud E. I. Schropp +6 more
TL;DR: Upconversion by lanthanide compounds in various host materials is discussed and upconversion to work for thin-film silicon solar cells is demonstrated.
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Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications
TL;DR: In this article, a comprehensive compilation of recent developments in low temperature deposited poly Si films, also known as microcrystalline silicon, is given, where the effect of ions and the frequency of the plasma ignition are discussed in relation to high deposition rate and the desired crystallinity and structure.