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Jatindra Kumar Rath

Other affiliations: Utrecht University
Bio: Jatindra Kumar Rath is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Thin film & Microcrystalline. The author has an hindex of 1, co-authored 2 publications receiving 97 citations. Previous affiliations of Jatindra Kumar Rath include Utrecht University.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a single junction p-i-n cells were made in a superstrate structure using p-μc-Si : H as the window layer directly on top of SnO2 : F coated glass.

97 citations

Journal ArticleDOI
TL;DR: In this article, the synthesis of Si1−x Ge x alloy nanocrystals by very-high-frequency plasmaenhanced chemical vapor deposition (VHF PECVD) technique at different silane to germane gas flow ratio (R) in a mixture of (H2 +Ar) dilution gas and H2 dilutiongas alone.
Abstract: We report on the synthesis of Si1−x Ge x alloy nanocrystals by very-high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) technique at different silane to germane gas flow ratio (R) in a mixture of (H2 +Ar) dilution gas and H2 dilution gas alone. TEM, SAED, EDS studies and HAADF-STEM mapping of the samples were done to investigate the NCs' size, crystallinity and distribution of Si and Ge in the Si1−x Ge x alloy NCs. The average estimated size of the NCs in all the samples are in the order of exciton Bohr radius of Ge (24.3 nm), thereby indicating the probability of good quantum confinement. The alloy nature of NCs was confirmed in Raman study. The content of Ge in SiGe NCs was evaluated from Raman spectra which show a direct correlation with the fraction of hydrogen flow in the dilution gas mixture.

1 citations


Cited by
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Journal ArticleDOI
Jatin K. Rath1
TL;DR: In this article, a comprehensive compilation of recent developments in low temperature deposited poly Si films, also known as microcrystalline silicon, is given, where the effect of ions and the frequency of the plasma ignition are discussed in relation to high deposition rate and the desired crystallinity and structure.

202 citations

BookDOI
01 Jan 2012
TL;DR: In this paper, a-Si:H/c-Si heterojunction and other high efficiency solar cells: a comparison of rear contact cells are presented. But the authors do not provide a detailed description of the interaction between the two heterojunctions.
Abstract: Foreword.- Introduction.- Status of heterojunction solar cell R&D.- Basic features of Heterojunctions illustrated by selected experimental methods and results.- Deposition methods of thin film silicon.- Electronic properties of ultrathin a-Si:H layers and the a-Si:H/c-Si interface.- Degradation of (bulk and thin film) a-Si and interface passivation.- Photoluminescence and electroluminescence for a Si:H/c Si device and interface characterization.- Deposition and properties of transparent conductive oxides.- Metallization and formation of contacts.- Electrical and optical characterization of a-Si:H/c Si cells.- Wet-chemical pre-treatment of c Si for a-Si:H/c-Si heterojunctions.- Theory of heterojunctions and the determination of band offsets from electrical measurements.- Modeling and simulation of a Si:H/c Si cells.- Surface passivation using ALD Al2O3.- Introduction to AFORS-HET.- Hands-on experience with simulation tools.- a-Si:H/c-Si heterojunction and other high efficiency solar cells: a comparison.- Rear contact cells.- Progress in systematic industrialization of Hetero-Junction-based Solar Cell technology.

190 citations

Book ChapterDOI
01 Mar 2011
TL;DR: In this paper, the authors describe the diamond lattice of crystal silicon as a regular array or lattices, which must be consistent with the underlying chemical bonding properties of the atoms, such as the four covalent bonds of a silicon atom.
Abstract: Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must be consistent with the underlying chemical bonding properties of the atoms. For example, a silicon atom forms four covalent bonds to neighboring atoms arranged symmetrically about it. This “tetrahedral” configuration is perfectly maintained in the “diamond” lattice of crystal silicon.

114 citations

Journal ArticleDOI
Jatin K. Rath1, M. Brinza1, Y. Liu1, A. Borreman, Ruud E. I. Schropp1 
TL;DR: In this paper, the authors describe the way to transfer process technology of state-of-the-art high efficiency thin film silicon solar cells fabrication on cheap plastic (such as PET or PEN) substrates, by two completely different approaches: (i) by transfer process (Helianthos concept) of thin-film silicon cells deposited at high substrate temperature, T s (∼200 ǫ) and (ii) direct deposition on temperature sensitive substrates at low T s(∼100 ǔ)

70 citations