Jay N. Zemel

Bio: Jay N. Zemel is an academic researcher from Silver Spring Networks. The author has contributed to research in topics: Scattering & Magneto. The author has an hindex of 6, co-authored 8 publications receiving 642 citations.

Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTe

Abstract: Single-crystal films of PbS, PbTe, PbSe, and SnTe have been grown on heated alkali-halide substrates. The temperature dependence of the mobility, Hall coefficient, and resistivity between 77\ifmmode^\circ\else\textdegree\fi{}K and 300\ifmmode^\circ\else\textdegree\fi{}K and the dependence of the magnetoresistance upon sample orientation and magnetic field strength at 77\ifmmode^\circ\else\textdegree\fi{}K have been studied. Analysis of the refractive indices, measured interferometrically in the 2.0- to 15.0-\ensuremath{\mu} region, has yielded optical dielectric constants and the direct energy gaps as functions of temperature. These studies indicate that the single-crystal films have electrical and optical properties comparable to those found in bulk material. Discussions of film formation and strain phenomena are presented and compared with the experimental results. Some of the limitations of these materials are discussed with particular emphasis on the role of structure of the films on the electrical properties.

Surface Transport in Semiconductors

Abstract: A transport theory is given for electrons and holes in space-charge layers at semiconductor surfaces. For diffuse surface scattering, the effective surface mobilities may differ significantly from the bulk mobility for any strength of space-charge layer. Agreement with Schrieffer's formulas is found only for strong space-charge layers, and the discrepancy is explained. The results are extended to cover an arbitrary degree of diffuseness of surface scattering and to cover samples of small thickness.

Surface Transport Phenomena in PbSe Epitaxial Films

Abstract: We examine the effect of ambients on the electrical properties of a number of PbSe epitaxial films. These properties are compared with the calculations based on existing theoretical models. We conclude that the existing surface-mobility calculations for degenerate semiconductors are inadequate. The most important result is that the scattering of carriers at the surface appears to be completely specular in character.

Handbook of Optical Materials

Abstract: CRYSTALLINE MATERIALS Introduction Physical Properties Optical Properties Mechanical Properties Thermal Properties Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties GLASSES Introduction Commercial Optical Glasses Specialty Optical Glasses Fused Silica Fluoride Glasses Chalcogenide Glasses Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties Special Glasses POLYMERIC MATERIALS Optical Plastics Index of Refraction Nonlinear Optical Properties Thermal Properties Engineering Data METALS Physical Properties of Selected Metals Optical Properties Mechanical Properties Thermal Properties Mirror Substrate Materials LIQUIDS Introduction Water Physical Properties of Selected Liquids Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Commercial Optical Liquids GASES Introduction Physical Properties of Selected Gases Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Atomic Resonance Filters APPENDICES Safe Handling of Optical Materials Abbreviations, Acronyms, and Mineralogical or Common Names for Optical Materials Abbreviations for Methods of Preparing Optical Materials and Thin Films Fundamental Physical Constants Units and Conversion Factors

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Abstract: Accurate modeling of MOS devices requires quantitative knowledge of carrier mobilities in surface inversion and accumulation layers. Optimization of device structures and accurate circuit simulation, particulary as technologies push toward fundamental limits, necessitate an understanding of how impurity doping levels, oxide charge densities, process techniques, and applied electric fields affect carrier surface mobilities. It is the purpose of this paper to present an extensive set experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures. Empirical equations are developed which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions. The experimental results are interpreted in terms of the dominant physical mechanisms responsible for mobility degradation at the Si/SiO 2 interface. From the observed effects of process parameters on mobility roll-off under high vertical fields, conclusions are drawn about optimum process conditions for maximizing mobility. The implications of this work for performance limits of several types of MOS devices are described.

High Thermoelectric Performance of p-Type SnTe via a Synergistic Band Engineering and Nanostructuring Approach

Abstract: SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficien...

Advances in Catalysis

Abstract: Advances in Catalysis and related Subjects Edited by W. G. Frankenburg, V. I. Komarewsky and E. K. Rideal. Vol. 3. Pp. xi + 360. 7.80 dollars. Vol. 4. Pp. xi + 457. 9.50 dollars. (New York: Academic Press, Inc., 1951 and 1952.)

Advances in thermoelectrics

Abstract: Thermoelectric generators, capable of directly converting heat into electricity, hold great promise for tackling the ever-increasing energy sustainability issue. The thermoelectric energy conversio...