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Author

Jayee Sinha

Bio: Jayee Sinha is an academic researcher from University of Calcutta. The author has contributed to research in topic(s): Beam divergence & Normalized frequency (fiber optics). The author has an hindex of 2, co-authored 5 publication(s) receiving 7 citation(s).
Papers
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Journal ArticleDOI
Titas Das1, Jayee Sinha1, Somenath Sarkar1Institutions (1)
Abstract: We present simple and complete empirical relations to predict the angle of beam divergence in terms of normalized frequency and aspect ratio of a single-mode trapezoidal index fiber. This is done for the far-field characterization over a long range of normalized frequencies without the calculation of normalized spot sizes. On comparison, we observe an excellent match of our results with exact values establishing the validity of our formulation. The formulation should attract attention as a simple alternative to the rigorous methods of estimating the angle of beam divergence for such fibers. It can be widely used by system users and developers for much better control over far-field related calculations and experiments.

3 citations


Proceedings ArticleDOI
01 Mar 2019
TL;DR: The transient response of Hybrid CMOS-memristor based logic gates and different adder circuits and multiplier circuit are performed in Cadence 180nm technology.
Abstract: Recent researches are mostly focused on technology scaling as well as device size minimization design techniques following Moore’s law. Conventional computing architectures are unable to fulfill modern application demands. Memristor is a promising alternative device which has been developed by many researchers [2] to draw attention of its structure for numerous applications which includes computational logic, memory implementations and neuromorphic systems. This paper emphasizes the basic properties of memristor at the device level. Different digital circuits have been designed for logic operations and DSP applications. Design methodologies are developed for proper circuit design, and circuit parameters are taken from a very detailed device model and optimization techniques. The transient response of Hybrid CMOS-memristor based logic gates and different adder circuits (i.e, half adder, full adder, carry-save adder) and multiplier circuit are performed in Cadence 180nm technology.

2 citations


Journal ArticleDOI
Titas Das1, Jayee Sinha1, Somenath Sarkar1Institutions (1)
01 Oct 2018-Optik
Abstract: We investigate the effect of Kerr nonlinearity on the angle of beam divergence of single-mode trapezoidal index fibers from its linear and nonlinear values. From comparison of angle of beam divergence in presence and absence of Kerr nonlinearity, the nonlinear effect for each aspect ratio is observed to be more profound in lower values of normalized frequency. Moreover, the triangular index profile supersedes the other index profiles in respect of relative change of angle of beam divergence. It should give the system users and developers a much better control over far-field related calculations and can be widely used for experiments in presence of optical nonlinearity.

1 citations


Journal ArticleDOI
Abstract: This work presents the comparative performance analysis of Ge 2 Sb 2 Te 5 (GST) and Ge 1 Cu 2 Te 3 (GCT) based phase change memory materials with ring-shaped confined chalcogenide (RCC) cell structure. Three-dimensional finite element simulation with rotational symmetry is used to analyze the electro-thermal process within the RCC cell during phase change operation. The RCC cell structures show superior performance in terms of power consumption required for phase change as compared to other reported PCRAM structures. The results indicate that during the transition from low to high resistance, GCT cell shows superior performance compared to GST cell with power consumption of 1.62 mW and 2.83 mW, respectively. Also, 42.75% reduction in power consumption has been observed in the proposed GCT cell. The GCT based RCC cell requires a relatively lower voltage of 1.75 V for phase transition in comparison to 2.55 V in a GST RCC cell of similar dimension.

1 citations


Journal ArticleDOI
Abstract: MnNiSi-based compounds exhibit giant isothermal magnetic entropy change (ΔSM) across their induced first-order coupled magnetostructural transition (MST) in the vicinity of room temperature, though in most of the cases, the use of Maxwell relation from a very frequently used but incorrect measurement protocol provides a nonphysical spike to the calculated ΔSM. Herein, to realize the accurate measurement protocol, we explore magnetocaloric properties of a (FeCoGa)x doped (MnNiSi)1−x compound with x = 0.165 rigorously. Several methods, including the estimation of ΔSM using Maxwell relation, Clausius-Clapeyron equation, and also from the calorimetry measurement, are discussed explicitly. The studied material is observed to show a MST at 265 K and a giant ΔSM as large as about −29.3 J kg−1 K−1 due to a magnetic field change of 5 T following the Maxwell equation during discontinuous cooling and field increasing mode, which enables the material as a promising candidate for magnetic refrigeration.

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Journal ArticleDOI
Abstract: Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe ( Ge 0.5 − x M x Te 0.5) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5 − x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5 − x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix. Out of all the studied systems, Mo was the only metal to cluster within GeTe. Analysis of the Ge–Te bond lengths and volumes of the Ge 0.5 − x M x Te 0.5 supercells shows that increasing the atomic concentration (2.08, 4.17, 6.25 at. %) of the different metals causes varied distortions of the crystal structure of GeTe that are accompanied by significant changes in the projected density of states. Computational predictions concerning metal solubility and the effect of metal incorporation on critical properties of GeTe are compared to experimental results in the literature (Cu, Mn, Mo, and Ti) and to transmission electron microscopy and transport data from newly characterized co-sputtered Ge 0.5 − x Fe x Te 0.5 films. The computational predictions of decreasing solubility (Mn > Cu, Fe > Ti, Mo) shows good agreement with experimental observations (Mn, Cu > Fe > Ti, Mo), and Ge 0.5 − x Fe x Te 0.5 films exhibited increased crystallization temperatures from pure GeTe.

2 citations


Journal ArticleDOI
01 Jan 2018-Optik
Abstract: Based on the splice loss analysis between two perfectly aligned single mode step and trapezoidal index fibers, we propose a simple empirical relation of power transmission coefficient in terms of normalised frequency and aspect ratio, using a recently reported Marcuse type formulation of spot size for trapezoidal index fiber. The relation is verified, after comparison with standard results from basic equations. Our empirical relation should find wide use by the system users to predict power transmission coefficient for known opto-geometrical parameters without the knowledge of spot size. Also, a simple graphical technique to predict an unknown aspect ratio of a trapezoidal index fiber is suggested and justified.

2 citations


Journal ArticleDOI
Titas Das1, Jayee Sinha1, Somenath Sarkar1Institutions (1)
01 Oct 2018-Optik
Abstract: We investigate the effect of Kerr nonlinearity on the angle of beam divergence of single-mode trapezoidal index fibers from its linear and nonlinear values. From comparison of angle of beam divergence in presence and absence of Kerr nonlinearity, the nonlinear effect for each aspect ratio is observed to be more profound in lower values of normalized frequency. Moreover, the triangular index profile supersedes the other index profiles in respect of relative change of angle of beam divergence. It should give the system users and developers a much better control over far-field related calculations and can be widely used for experiments in presence of optical nonlinearity.

1 citations


Journal ArticleDOI
Titas Das1, Somenath Sarkar1Institutions (1)
01 Jan 2020-Optik
Abstract: To characterize far-field of a solid-core photonic crystal fiber (PCF), we present simple empirical relations for angle of beam divergence of PCF only depending on the opto-geometrical parameters like wavelength of the light used and the two structural parameters – the air hole diameter and the hole pitch. We validate the accuracy of the proposed expressions by comparing the empirical relations with the results of exact values. We can easily evaluate the far-field properties of PCFs through the empirical relations without the need for numerical computations of V parameter or spot size or the effective cladding index.

Journal ArticleDOI
Abstract: In this paper, a hybrid memristor-CMOS implementation of logic gates simulated using LTSpice. Memristors' implementation in computer architecture designs explored in various design structures proposed by researchers from all around the world. However, all prior designs have some drawbacks in terms of applicability, scalability, and performance. In this research, logic gates design based on the hybrid memristor-CMOS structure presented. 2-inputs AND, OR, NAND, NOR, XOR, and XNOR are demonstrated with minimum components requirements. In addition, a 1-bit full adder circuit with high performance and low area consumption is also proposed. The proposed full adder only consists of 4 memristors and 7 CMOS transistors. Half design of the adder base on the memristor component created. Through analysis and simulations, the memristor implementation on designing logic gates using memristor-CMOS structure demonstrated using the generalized metastable switch memristor (MSS) model and LTSpice. In conclusion, the proposed approach improves speed and require less area.

Performance
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Author's H-index: 2

No. of papers from the Author in previous years
YearPapers
20211
20191
20181
20172