Jean Giess

TL;DR: In this article, a method of growing an epitaxial crystalline layer on a substrate which comprises the steps of, (a) providing in the reaction zone of a reaction vessel a heated substrate, (b) establishing a gas stream, provided by a carrier gas which comprises at least 50% by volume of an inert gas, which contains, in the vapour phase, at least one alkyl of an element selected from Group Vb and Group VIb of the Periodic Table, and (c) irradiating at least a major part of the surface of the substrate

TL;DR: In this paper, the authors measured the spin lifetimes in long-wavelength narrow-gap semiconductors at wavelengths between 4 and 10 µm and from 4 to 300 K.

TL;DR: In this paper, the design and characterization of dual-waveband detectors including current-voltage and spectral cross talk for the case of two close sub-bands within the 3-5 μm mid-wave infrared (MWIR) spectral range are presented.

TL;DR: In this paper, the effect of changing active region cadmium composition and active region doping is presented along with an assessment of some of the trade-offs between dark leakage current, gain, operating voltage and temperature of operation.

TL;DR: In this article, the authors demonstrate the successful growth of mercury cadmium telluride (MCT) infrared detector material on silicon substrates, which increases the maximum achievable array size, reduces manufacturing costs and paves the way for infrared detector growth directly on multiplexing circuits.