Author
Jean-Michel Gérard
Other affiliations: Commissariat à l'énergie atomique et aux énergies alternatives, French Alternative Energies and Atomic Energy Commission, Technical University of Denmark ...read more
Bio: Jean-Michel Gérard is an academic researcher from University of Grenoble. The author has contributed to research in topics: Quantum dot & Spontaneous emission. The author has an hindex of 58, co-authored 421 publications receiving 14896 citations. Previous affiliations of Jean-Michel Gérard include Commissariat à l'énergie atomique et aux énergies alternatives & French Alternative Energies and Atomic Energy Commission.
Topics: Quantum dot, Spontaneous emission, Photonics, Photoluminescence, Photon
Papers published on a yearly basis
Papers
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TL;DR: In this paper, a spontaneous emission rate enhancement by a factor of up to 5 was selectively observed for the QB's which are on resonance with one-cavity mode. But the effect of the random spatial and spectral distributions of the QBs was not considered.
Abstract: Semiconductor quantum boxes (QB's) are well suited to cavity quantum electrodynamic experiments in the solid state because of their sharp emission. We study by time-resolved photoluminescence InAs QB's placed in the core of small-volume and high-finesse GaAs/AlAs pillar microresonators. A spontaneous emission rate enhancement by a factor of up to 5 is selectively observed for the QB's which are on resonance with one-cavity mode. We explain its magnitude by considering the Purcell figure of merit of the micropillars and the effect of the random spatial and spectral distributions of the QB's.
1,016 citations
TL;DR: Through the reduction of the number of emitting dots in small mesa structures, it is shown narrow lines in the spectra, each associated with a single InAs dot, indicate short capture and relaxation times into the dots.
Abstract: We present photoluminescence data on InAs quantum dots grown by molecular beam epitaxy on GaAs. Through the reduction of the number of emitting dots in small mesa structures, we evidence narrow lines in the spectra, each associated with a single InAs dot. Beyond the statistical analysis allowed by this technique, our results indicate short capture and relaxation times into the dots. This approach opens the route towards the detailed optical study of high quality easily fabricated single semiconductor quantum dots.
948 citations
TL;DR: In this paper, an InAs quantum dot embedded in a GaAs photonic nanowire with carefully tailored ends was used to achieve a record source efficiency of 0.72, combined with pure single-photon emission.
Abstract: The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication, optical quantum information processing and metrology. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond or a semiconductor quantum dot. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions and cavity quantum electrodynamics effects have been applied. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire with carefully tailored ends. Under optical pumping, we demonstrate a record source efficiency of 0.72, combined with pure single-photon emission. This non-resonant approach also provides broadband spontaneous emission control, thus offering appealing novel opportunities for the development of single-photon sources based on spectrally broad emitters, wavelength-tunable sources or efficient sources of entangled photon pairs.
901 citations
TL;DR: The observation of the strong-coupling regime between the excitonic transition of a single GaAs quantum dot and a discrete optical mode of a microdisk microcavity is reported on.
Abstract: We report on the observation of the strong-coupling regime between the excitonic transition of a single GaAs quantum dot and a discrete optical mode of a microdisk microcavity. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical mode. At resonance, we observe a clear anticrossing behavior, signature of the strong-coupling regime. The vacuum Rabi splitting amounts to 400 microeV and is twice as large as the individual linewidths.
722 citations
TL;DR: In this article, a single-mode solid-state single photon source based on an isolated InAs quantum dot (QD) on resonance with the fundamental mode of a pillar microcavity is presented.
Abstract: We report the fabrication of a single-mode solid-state single photon source, based on an isolated InAs quantum dot (QD) on resonance with the fundamental mode of a pillar microcavity. Photon correlation experiments under pulsed excitation reveal a clear antibunching behavior. We show that a preparation of the single photons in a given quantum state (same spatial mode, same polarization) can be obtained by placing a QD in resonance with the nondegenerate fundamental mode of an elliptical micropillar.
475 citations
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Journal Article•
28,685 citations
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.
9,917 citations
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.
9,158 citations
Book•
15 May 2007
TL;DR: In this paper, the authors discuss the role of surface plasmon polaritons at metal/insulator interfaces and their application in the propagation of surfaceplasmon waveguides.
Abstract: Fundamentals of Plasmonics.- Electromagnetics of Metals.- Surface Plasmon Polaritons at Metal / Insulator Interfaces.- Excitation of Surface Plasmon Polaritons at Planar Interfaces.- Imaging Surface Plasmon Polariton Propagation.- Localized Surface Plasmons.- Electromagnetic Surface Modes at Low Frequencies.- Applications.- Plasmon Waveguides.- Transmission of Radiation Through Apertures and Films.- Enhancement of Emissive Processes and Nonlinearities.- Spectroscopy and Sensing.- Metamaterials and Imaging with Surface Plasmon Polaritons.- Concluding Remarks.
7,238 citations
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TL;DR: The author revealed that quantum teleportation as “Quantum one-time-pad” had changed from a “classical teleportation” to an “optical amplification, privacy amplification and quantum secret growing” situation.
Abstract: Quantum cryptography could well be the first application of quantum mechanics at the individual quanta level. The very fast progress in both theory and experiments over the recent years are reviewed, with emphasis on open questions and technological issues.
6,949 citations