Jean-Michel Portal

Bio: Jean-Michel Portal is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topic(s): Resistive random-access memory & Artificial neural network. The author has an hindex of 25, co-authored 136 publication(s) receiving 2047 citation(s). Previous affiliations of Jean-Michel Portal include Alternatives & Aix-Marseille University.

Testing the interconnect of RAM-based FPGAs

Abstract: Testing FPGAs before user programming can be an expensive procedure. Applying their general test configuration and test pattern generation methodology, the authors devise an efficient test procedure for the interconnect structure and demonstrate its applicability to commercial FPGAs.

PAH dissipation in a contaminated river sediment under oxic and anoxic conditions.

Abstract: A batch experiment was conducted to compare PAH degradation in a polluted river sediment under aerobic and anaerobic conditions, and to investigate whether input of fresh organic material (cellulose) could enhance such degradation. All measurements were checked against abiotic control treatments to exclude artifacts of sample preparation and non-biological processes like aging. Three- and four-ring PAHs could be degraded by the indigenous microbial community under aerobic conditions, but anaerobic metabolism based on iron and sulphate reduction was not coupled with PAH degradation of even the simplest 3-ring compounds like phenanthrene. Cellulose addition stimulated both aerobic and anaerobic respiration, but had no effect on PAH dissipation. We conclude that natural attenuation of PAHs in polluted river sediments under anaerobic conditions is exceedingly slow. Dredging and biodegradation on land under aerobic conditions would be required to safely remediate and restore polluted sites.

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Abstract: Emerging nonvolatile memories based on resistive switching mechanisms pull intense research and development efforts from both academia and industry. Oxide-based resistive random access memories (OxRAM) gather noteworthy performances, such as fast WRITE/READ speed, low power, high endurance, and large integration density that outperform conventional flash memories. To fully explore new design concepts, such as distributed memory in logic or biomimetic architectures, robust OxRAM compact models must be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we propose a physics-based compact model used in electrical simulator for bipolar OxRAM memories. After uncovering the theoretical background and the set of relevant physical parameters, this model is confronted to experimental electrical data. The excellent agreement with these data suggests that this model can be confidently implemented into circuit simulators for design purpose.

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

Abstract: Emerging non-volatile memories (NVM) based on resistive switching mechanism (RS) such as STT-MRAM, OxRRAM and CBRAM etc., are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power and good endurance (e.g., > 1012) beyond mainstream NVMs, which allow them to be embedded directly with logic units for computing purpose. This integration could increase significantly the power/die area efficiency, and then overcome definitively the power/speed bottlenecks of modern VLSIs. This paper presents firstly a theoretical investigation of synchronous NV logic gates based on RS memories (RS-NVL). Special design techniques and strategies are proposed to optimize the structure according to different resistive characteristics of NVMs. To validate this study, we simulated a non-volatile full-adder (NVFA) with two types of NVMs: STT-MRAM and OxRRAM by using CMOS 40 nm design kit and compact models, which includes related physics and experimental parameters. They show interesting power, speed and area gain compared with synchronized CMOS FA while keeping good reliability.

EEPROM memory: threshold voltage built in self diagnosis

Abstract: Knowing, that the threshold voltage of the EEPROM memory cells is a key parameter to determine the overall performance of the memory, a build in structure to extract this information is a very relevant choice to fast diagnose failure in the memory. Thus, the objective of this paper is to present a built in self-diagnosis of EEPROM memory cells, based on threshold voltage extraction. In order to extract the threshold voltage, the modified circuit and the associated test sequence are presented. Based on the threshold voltage extraction, complementary information is proposed to improve the classical memory diagnosis

Natural organic matter removal by coagulation during drinking water treatment: A review

Abstract: Natural organic matter (NOM) is found in all surface, ground and soil waters. An increase in the amount of NOM has been observed over the past 10-20 years in raw water supplies in several areas, which has a significant effect on drinking water treatment. The presence of NOM causes many problems in drinking water and drinking water treatment processes, including (i) negative effect on water quality by causing colour, taste and odor problems, (ii) increased coagulant and disinfectant doses (which in turn results in increased sludge volumes and production of harmful disinfection by-products), (iii) promoted biological growth in distribution system, and (iv) increased levels of complexed heavy metals and adsorbed organic pollutants. NOM can be removed from drinking water by several treatment options, of which the most common and economically feasible processes are considered to be coagulation and flocculation followed by sedimentation/flotation and sand filtration. Most of the NOM can be removed by coagulation, although, the hydrophobic fraction and high molar mass compounds of NOM are removed more efficiently than hydrophilic fraction and the low molar mass compounds. Thus, enhanced and/or optimized coagulation, as well as new process alternatives for the better removal of NOM by coagulation process has been suggested. In the present work, an overview of the recent research dealing with coagulation and flocculation in the removal of NOM from drinking water is presented.

Emerging memories: resistive switching mechanisms and current status.

Abstract: The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Monitoring of environmental exposure to polycyclic aromatic hydrocarbons: a review

Abstract: Polycyclic aromatic hydrocarbons (PAHs) are a large group of organic compounds with two or more fused aromatic rings. They have a relatively low solubility in water, but are highly lipophilic. Most of the PAHs with low vapour pressure in the air are adsorbed on particles. When dissolved in water or adsorbed on particulate matter, PAHs can undergo photodecomposition when exposed to ultraviolet light from solar radiation. In the atmosphere, PAHs can react with pollutants such as ozone, nitrogen oxides and sulfur dioxide, yielding diones, nitro- and dinitro-PAHs, and sulfonic acids, respectively. PAHs may also be degraded by some microorganisms in the soil. PAHs are widespread environmental contaminants resulting from incomplete combustion of organic materials. The occurrence is largely a result of anthropogenic emissions such as fossil fuel-burning, motor vehicle, waste incinerator, oil refining, coke and asphalt production, and aluminum production, etc. PAHs have received increased attention in recent years in air pollution studies because some of these compounds are highly carcinogenic or mutagenic. Eight PAHs (Car-PAHs) typically considered as possible carcinogens are: benzo(a)anthracene, chrysene, benzo(b)fluoranthene, benzo(k)fluoranthene, benzo(a)pyrene (B(a)P), dibenzo(a,h)anthracene, indeno(1,2,3-cd)pyrene and benzo(g,h,i)perylene. In particular, benzo(a)pyrene has been identified as being highly carcinogenic. The US Environmental Protection Agency (EPA) has promulgated 16 unsubstituted PAHs (EPA-PAH) as priority pollutants. Thus, exposure assessments of PAHs in the developing world are important. The scope of this review will be to give an overview of PAH concentrations in various environmental samples and to discuss the advantages and limitations of applying these parameters in the assessment of environmental risks in ecosystems and human health. As it well known, there is an increasing trend to use the behavior of pollutants (i.e. bioaccumulation) as well as pollution-induced biological and biochemical effects on human organisms to evaluate or predict the impact of chemicals on ecosystems. Emphasis in this review will, therefore, be placed on the use of bioaccumulation and biomarker responses in air, soil, water and food, as monitoring tools for the assessment of the risks and hazards of PAH concentrations for the ecosystem, as well as on its limitations.

Neuromorphic computing using non-volatile memory

Abstract: Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. We first revie...