Showing papers by "Jean-Michel Portal published in 2011"
TL;DR: In this article, a self-consistent physical model for set/reset operations involved in unipolar resistive switching memories integrating a transition metal oxide is presented, where set operation is described in terms of a local electrochemical reduction of the oxide leading to the formation of metallic conductive filaments.
Abstract: This Letter deals with a self-consistent physical model for set/reset operations involved in unipolar resistive switching memories integrating a transition metal oxide. In this model, set operation is described in terms of a local electrochemical reduction of the oxide leading to the formation of metallic conductive filaments. Beside, reset operation relies on the thermally assisted destruction of the formed metallic filaments by Joule heating effect. An excellent agreement is demonstrated with numerous published experimental data suggesting that this model can be confidently implemented into circuit simulators for design purpose.
65 citations
TL;DR: In this article, the authors compared the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations and discussed the impact on the definition of an event criterion.
Abstract: This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed.
25 citations
08 Jun 2011
TL;DR: This paper investigates the usage of Oxide Resistive Random Access Memory (OxRRAM) to improve the communication switchboxes of Field-Programmable-Gate-Arrays (FPGAs) and proves the interest of using unipolar OxRRAM in such devices thanks to a complete methodology.
Abstract: New memories, such as non-volatile resistive memories present bright prospect in catering to the ever-growing memory needs. In this paper, we investigate the usage of Oxide Resistive Random Access Memory (OxRRAM) to improve the communication switchboxes of Field-Programmable-Gate-Arrays (FPGAs). We prove the interest of using unipolar OxRRAM in such devices thanks to a complete methodology, starting from compact model based on self-consistent physical model up to architectural evaluation using typical FPGA benchmarks. Besides, the architectural gains in terms of area by 1.4x and write time by 17.4x in comparison with phase-change memories (PCM). An improvement in area by 4.82x and write time by 285.7x for conventional Flash technology as well as a reduction in overall delay by 49.3% due to the reduced on-resistance and smaller size are reported.
13 citations
TL;DR: This study shows that VT shift due to Hot Carrier Injection stress is accelerated on small width devices, which allows explaining gate voltage matching behavior in the sub-threshold area used in low power analog applications.
8 citations
TL;DR: A mixed test structure designed to characterize yield losses due to hard defect and back-end process variation (PV) at die and wafer level is presented and applied to experimental results to confirm the ability of the structure to monitor PV and defect density.