J
Jean-Michel Portal
Researcher at Centre national de la recherche scientifique
Publications - 145
Citations - 2335
Jean-Michel Portal is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Resistive random-access memory & Artificial neural network. The author has an hindex of 25, co-authored 136 publications receiving 2047 citations. Previous affiliations of Jean-Michel Portal include Alternatives & Aix-Marseille University.
Papers
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Journal ArticleDOI
Données actuelles sur les transferts d'atrazine dans l'environnement
TL;DR: Les different types of dispersion de l'atrazine dans les sols et l'environnement sont examinees, and les resultats discutes en relation avec les methodes d'approche respectives as discussed by the authors.
Proceedings ArticleDOI
Embedded high-precision frequency-based capacitor measurement system
TL;DR: This paper presents a direct way to measure the electrical value of capacitors embedded in a circuit using a ring-oscillator, largely automated to minimize the use of external instrumentation and to speed-up the measurement process while giving a digital signature of the capacitor value.
Journal ArticleDOI
Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up
Hraziia,Adam Makosiej,Giorgio Palma,Jean-Michel Portal,Marc Bocquet,Olivier Thomas,Fabien Clermidy,Marina Reyboz,Santhosh Onkaraiah,Christophe Muller,Damien Deleruyelle,Andrei Vladimirescu,Amara Amara,Costin Anghel +13 more
TL;DR: In this article, a Non-Volatile SRAM (NV-SRAM) cell is proposed, where the information is backed up during POWER-down/restore cycle in two bipolar Oxide Resistive RAMs (OxRRAMs).
Journal ArticleDOI
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress
Y. Joly,Y. Joly,L. Lopez,Jean-Michel Portal,Hassen Aziza,Jean-Luc Ogier,Y. Bert,Franck Julien,Pascal Fornara +8 more
TL;DR: This study shows that VT shift due to Hot Carrier Injection stress is accelerated on small width devices, which allows explaining gate voltage matching behavior in the sub-threshold area used in low power analog applications.
Journal ArticleDOI
Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation Per Synapse
Axel Laborieux,Marc Bocquet,Tifenn Hirtzlin,Jacques-Olivier Klein,Etienne Nowak,Elisa Vianello,Jean-Michel Portal,Damien Querlioz +7 more
TL;DR: It is shown based on neural network simulation on the CIFAR-10 image recognition task that the use of ternary neural networks significantly increases neural network performance, with regards to binary ones, which are often preferred for inference hardware.