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Jee Ho Park

Bio: Jee Ho Park is an academic researcher from Yonsei University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 13, co-authored 37 publications receiving 778 citations.

Papers
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Journal ArticleDOI
TL;DR: Th thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on a peroxo-zirconium oxide (ZrO(2)) dielectric with a maximum temperature of 350 °C are demonstrated and successfully blocked leakage current even in annealing at 300 °C.
Abstract: We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO2) dielectric with a maximum temperature of 350 °C. The formation of ZrO2 films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H2O2). The H2O2 forms peroxo groups in the ZrO2 film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO2 film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO2 film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO2 films at 350 °C. These TFTs had a mobility of 7.21 cm2/(V s), a threshold voltage (Vth) of 3.22 V, and a Vth shift of 1.6 V under positive gate bias stress.

163 citations

Journal ArticleDOI
TL;DR: The results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.
Abstract: We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

111 citations

Journal ArticleDOI
TL;DR: In this article, a low-temperature, solution-processed high-k HfO2 gate dielectric was demonstrated and a thin-film transistor (TFT) was fabricated with this gate.
Abstract: A low-temperature, solution-processed high-k HfO2 gate dielectric was demonstrated. To decompose a hafnium precursor at a temperature lower than 200 °C, an aqueous solution of HfCl4 was used because the strongly hydrated hafnium precursor was decomposed at a much lower temperature than anhydrous or partially hydrated hafnium chloride. No hazardous organic material was required in the low-temperature HfO2 coating process. Thus this precursor solution is environmentally safe and it is preferable to use this solution for gate dielectric coating on flexible substrates. The fabricated HfO2 gate dielectric shows reliable breakdown characteristics and high dielectric constant. We fabricated a thin film transistor (TFT) device with this gate dielectric and a maximum processing temperature of 150 °C for all the components of the TFT. The ZnO TFT on the HfO2 gate dielectric shows field-effect mobility of 1.17 cm2 V−1 s−1 and threshold voltage of 5.87 V. These results demonstrate the potential of our HfO2 thin film for flexible electronic device fabrication.

90 citations

Journal ArticleDOI
TL;DR: In this paper, a solution-processed ionic amorphous Al2O3 dielectric with a low temperature annealing process at 350 °C shows good compatibility and high performance in metal oxide semiconductor thin film transitors (TFTs) such as Li-ZnO TFTs.
Abstract: A solution-processed ionic amorphous Al2O3 dielectric with a low temperature annealing process at 350 °C shows good compatibility and high performance in metal oxide semiconductor thin film transitors (TFTs) such as Li–ZnO TFTs and In–ZnO TFTs. The Li–ZnO/Al2O3 and In–ZnO/Al2O3 TFTs, with solution-processability and low temperature annealing at a maximum of 350 °C, exhibited field-effect mobilities of 46.9 cm2 V−1 s−1 in crystalline Li–ZnO/Al2O3 TFTs and 44.2 cm2 V−1 s−1 in amorphous In–ZnO/Al2O3 TFTs with an on/off current ratio of more than 105. The proton mobile ion, such as hydrogen ion (H+) from chemisorbed water, in the ionic Al2O3 dielectric remarkably induces a high performance capacitance by the formation of an electrical double layer. The chemisorbed water was monitored by FT-IR and ellipsometric porosimetry measurements. Furthermore, the addition of H2O2 to the ionic Al2O3 dielectric precursor successfully suppressed the oxygen vacancies in the dielectric layer, which caused the electrical trap and pass, and confirmed the stable operation. These ionic amorphous Al2O3 dielectrics show good potential as switching TFTs devices in advanced displays, because they can satisfy the various demands of next-generation high-performance TFTs, such as low-cost, solution-processability, and a relatively low-temperature process.

67 citations

Journal ArticleDOI
TL;DR: A novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature is reported, which means indium zinc oxide (IZO) thin- Film transistors fabricated from IZO solution at 4 °C can be operated after annealing at low temperatures.
Abstract: Herein, we report a novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature. As a result, indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated from IZO solution at 4 °C can be operated after annealing at low temperatures (∼250 °C). In contrast, IZO TFTs fabricated from IZO solutions at 25 and 60 °C must be annealed at 275 and 300 °C, respectively. We also found that IZO TFTs fabricated from the IZO precursor solution at 4 °C had the highest mobility of 12.65 cm2/(V s), whereas the IZO TFTs fabricated from IZO precursor solutions at 25 and 60 °C had field-effect mobility of 5.39 and 4.51 cm2/(V s), respectively, after annealing at 350 °C. When the IZO precursor solution is at 4 °C, metal cations such as indium (In3+) and zinc ions (Zn2+) can be fully surrounded by H2O molecules, because of the higher dielectric constant of H2O at lower temperatures. ...

42 citations


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01 Jan 2007
Abstract: Fogging occurs when moisture condensation takes the form of accumulated droplets with diameters larger than 190 nm or half of the shortest wavelength (380 nm) of visible light. This problem may be effectively addressed by changing the affinity of a material’s surface for water, which can be accomplished via two approaches: i) the superhydrophilic approach, with a water contact angle (CA) less than 5°, and ii) the superhydrophobic approach, with a water CA greater than 150°, and extremely low CA hysteresis. To date, all techniques reported belong to the former category, as they are intended for applications in optical transparent coatings. A well-known example is the use of photocatalytic TiO2 nanoparticle coatings that become superhydrophilic under UV irradiation. Very recently, a capillary effect was skillfully adopted to achieve superhydrophilic properties by constructing 3D nanoporous structures from layer-by-layer assembled nanoparticles. The key to these two “wet”-style antifogging strategies is for micrometer-sized fog drops to rapidly spread into a uniform thin film, which can prevent light scattering and reflection from nucleated droplets. Optical transparency is not an intrinsic property of antifogging coatings even though recently developed antifogging coatings are almost transparent, and the transparency could be achieved by further tuning the nanoparticle size and film thickness. To our knowledge, the antifogging coatings may also be applied to many fields that do not require optical transparency, including, for example, paints for inhibiting swelling and peeling issues and metal surfaces for preventing corrosion. These types of issues, which are caused by adsorption of moisture, are hard to solve by the superhydrophilic approach because of its inherently “wet” nature. Thus, a “dry”-style antifogging strategy, which consists of a novel superhydrophobic technique that can prevent moisture or microscale fog drops from nucleating on a surface, is desired. Recent bionic researches have revealed that the self-cleaning ability of lotus leaves and the striking ability of a water-strider’s legs to walk on water can be attributed to the ideal superhydrophobicity of their surfaces, induced by special microand nanostructures. To date, the biomimetic fabrication of superhydrophobic microand/or nanostructures has attracted considerable interest, and these types of materials can be used for such applications as self-cleaning coatings and stain-resistant textiles. Although a superhydrophobic technique inspired by lotus leaves is expected to be able to solve such fogging problems because the water droplets can not remain on the surface, there are no reports of such antifogging coatings. Very recently, researchers from General Motors have reported that the surfaces of lotus leaves become wet with moisture because the size of the fog drops are at the microscale—so small that they can be easily trapped in the interspaces among micropapillae. Thus, lotuslike surface microstructures are unsuitable for superhydrophobic antifogging coatings, and a new inspiration from nature is desired for solving this problem. In this communication, we report a novel, biological, superhydrophobic antifogging strategy. It was found that the compound eyes of the mosquito C. pipiens possess ideal superhydrophobic properties that provide an effective protective mechanism for maintaining clear vision in a humid habitat. Our research indicates that this unique property is attributed to the smart design of elaborate microand nanostructures: hexagonally non-close-packed (ncp) nipples at the nanoscale prevent microscale fog drops from condensing on the ommatidia surface, and hexagonally close-packed (hcp) ommatidia at the microscale could efficiently prevent fog drops from being trapped in the voids between the ommatidia. We also fabricated artificial compound eyes by using soft lithography and investigated the effects of microand nanostructures on the surface hydrophobicity. These findings could be used to develop novel superhydrophobic antifogging coatings in the near future. It is known that mosquitoes possess excellent vision, which they exploit to locate various resources such as mates, hosts, and resting sites in a watery and dim habitat. To better understand such remarkable abilities, we first investigated the interaction between moisture and the eye surface. An ultrasonic humidifier was used to regulate the relative humidity of the atmosphere and mimic a mist composed of numerous tiny water droplets with diameters less than 10 lm. As the fog was C O M M U N IC A IO N

756 citations

Journal Article
TL;DR: In this article, a comprehensive review of the state-of-the-art research activities in the field of inorganic semiconductor nanostructures is presented, which mainly focuses on the most widely studied inorganic nano-structures, such as ZnO, ZnS, Si, WO3, AlN, SiC and their field-emission properties.
Abstract: Inorganic semiconductor nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating the size and dimensionality dependence of their properties for potential applications. The use of such nanostructures with tailored geometries as building blocks is also expected to play crucial roles in future nanodevices. Since the discovery of carbon nanotubes much attention has been paid to exploring the usage of inorganic semiconductor nanostructures as field-emitters due to their low work functions, high aspect ratios and mechanical stabilities, and high electrical and thermal conductivities. This article provides a comprehensive review of the state-of-the-art research activities in the field. It mainly focuses on the most widely studied inorganic nanostructures, such as ZnO, ZnS, Si, WO3, AlN, SiC, and their field-emission properties. We begin with a survey of inorganic semiconductor nanostructures and the field-emission principle, and then discuss the recent progresses on several kinds of important nanostructures and their field-emission characteristics in detail and overview some additional inorganic semiconducting nanomaterials in short. Finally, we conclude this review with some perspectives and outlook on the future developments in this area.

528 citations

Journal ArticleDOI
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Abstract: The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

472 citations

Journal ArticleDOI
TL;DR: The physics and materials science of electrical contacts to carbon nanotubes, semiconductor nanowires and graphene are discussed, and the main research and development challenges in the field are outlined.
Abstract: Existing models of electrical contacts are often inapplicable at the nanoscale because there are significant differences between nanostructures and bulk materials arising from unique geometries and electrostatics. In this Review, we discuss the physics and materials science of electrical contacts to carbon nanotubes, semiconductor nanowires and graphene, and outline the main research and development challenges in the field. We also include a case study of gold contacts to germanium nanowires to illustrate these concepts.

468 citations

Journal ArticleDOI
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Abstract: Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high-k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum...

459 citations