Jens Baringhaus

TL;DR: It is shown that 40-nanometre-wide graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic conductors on a length scale greater than ten micrometres, which is similar to the performance of metallic carbon nanotubes.

TL;DR: In this article, a new fabrication method for epitaxial graphene on SiC is presented, which enables the growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices.

TL;DR: In this paper, a new fabrication method for epitaxial graphene on SiC is presented, which enables the growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices.

TL;DR: In this article, the quasiparticle dynamics of sheet plasmons in epitaxially grown graphene layers on SiC(0001) has been studied systematically as a function of temperature, intrinsic defects, influence of multilayers and carrier density using electron energy loss spectroscopy with high energy and momentum resolution.