Jens H. Schmid

Bio: Jens H. Schmid is an academic researcher from National Research Council. The author has contributed to research in topics: Silicon photonics & Grating. The author has an hindex of 33, co-authored 199 publications receiving 3039 citations.

Subwavelength-Grating Metamaterial Structures for Silicon Photonic Devices

Abstract: Segmenting silicon waveguides at the subwavelength scale produce an equivalent homogenous material. The geometry of the waveguide segments provides precise control over modal confinement, effective index, dispersion and birefringence, thereby opening up new approaches to design devices with unprecedented performance. Indeed, with ever-improving lithographic technologies offering sub-100-nm patterning resolution in the silicon photonics platform, many practical devices based on subwavelength structures have been demonstrated in recent years. Subwavelength engineering has thus become an integral design tool in silicon photonics, and both fundamental understanding and novel applications are advancing rapidly. Here, we provide a comprehensive review of the state of the art in this field. We first cover the basics of subwavelength structures, and discuss substrate leakage, fabrication jitter, reduced backscatter, and engineering of material anisotropy. We then review recent applications including broadband waveguide couplers, high-sensitivity evanescent field sensors, low-loss devices for mid-infrared photonics, polarization management structures, spectral filters, and highly efficient fiber-to-chip couplers. We finally discuss the future prospects for subwavelength silicon structures and their impact on advanced device design.

High-resolution Fourier-transform spectrometer chip with microphotonic silicon spiral waveguides

Abstract: We report a stationary Fourier-transform spectrometer chip implemented in silicon microphotonic waveguides. The device comprises an array of 32 Mach-Zehnder interferometers (MZIs) with linearly increasing optical path delays between the MZI arms across the array. The optical delays are achieved by using Si-wire waveguides arranged in tightly coiled spirals with a compact device footprint of 12 mm(2). Spectral retrieval is demonstrated in a single measurement of the stationary spatial interferogram formed at the output waveguides of the array, with a wavelength resolution of 40 pm within a free spectral range of 0.75 nm. The phase and amplitude errors arising from fabrication imperfections are compensated using a transformation matrix spectral retrieval algorithm.

Subwavelength index engineered surface grating coupler with sub-decibel efficiency for 220-nm silicon-on-insulator waveguides.

Abstract: Surface grating couplers are fundamental components in chip-based photonic devices to couple light between photonic integrated circuits and optical fibers. In this work, we report on a grating coupler with sub-decibel experimental coupling efficiency using a single etch process in a standard 220-nm silicon-on-insulator (SOI) platform. We specifically demonstrate a subwavelength metamaterial refractive index engineered nanostructure with backside metal reflector, with the measured peak fiber-chip coupling efficiency of -0.69 dB (85.3%) and 3 dB bandwidth of 60 nm. This is the highest coupling efficiency hitherto experimentally achieved for a surface grating coupler implemented in 220-nm SOI platform.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

Abstract: Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO2 upper cladding thin high-index Si3N4 layers. The Si3N4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

Abstract: We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Silicon microring resonators

Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

Device Requirements for Optical Interconnects to Silicon Chips

Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

Metamaterial-inspired silicon nanophotonics

Abstract: Applying metamaterial concepts to dielectric systems offers low losses compared with metallic structures. Here, silicon-based metamaterial and nanophotonic advances are reviewed. The prospect of creating metamaterials with optical properties greatly exceeding the parameter space accessible with natural materials has been inspiring intense research efforts in nanophotonics for more than a decade. Following an era of plasmonic metamaterials, low-loss dielectric nanostructures have recently moved into the focus of metamaterial-related research. This development was mainly triggered by the experimental observation of electric and magnetic multipolar Mie-type resonances in high-refractive-index dielectric nanoparticles. Silicon in particular has emerged as a popular material choice, due to not only its high refractive index and very low absorption losses in the telecom spectral range, but also its paramount technological relevance. This Review overviews recent progress on metamaterial-inspired silicon nanostructures, including Mie-resonant and off-resonant regimes.