J
Jens Peer Ing Grad Stengl
Researcher at Siemens
Publications - 11
Citations - 573
Jens Peer Ing Grad Stengl is an academic researcher from Siemens. The author has contributed to research in topics: Transistor & Power MOSFET. The author has an hindex of 7, co-authored 11 publications receiving 552 citations.
Papers
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Proceedings ArticleDOI
A FET-controlled thyristor in SIPMOS technology
TL;DR: The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices as mentioned in this paper.
Patent
FET Controlled thyristor
TL;DR: In this paper, a controlled semiconductor switch with a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivities type, and also containing a third zone of the first conductivities and a fourth zone of 2.5 conductivities, is presented, where the control electrode lies on the insulating layer and covers a first channel zone associated with the FET.
Patent
Planar semiconductor with increased breakdown voltage
TL;DR: In this paper, a semiconductor arrangement comprising a substrate (1), a plurality of cells, each having a first zone (3) of the second conductivity type which is embedded in planar fashion in the substrate, and a second zone (4) embedded in a planar manner in the first zone, where, in the channel zone (5), there is an insulating layer (6) arranged on the substrate surface and on which there is a control electrode (7, 12) which covers at least the channel zones (5).
Patent
Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation
TL;DR: In this paper, a light-controlled thyristor with electrodes contacting the first and second zones of a given conduction type and having a given depth and being adjacent to the surface of the body was presented.