Jérémie Grisolia

Bio: Jérémie Grisolia is an academic researcher from University of Toulouse. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 17, co-authored 67 publications receiving 1241 citations. Previous affiliations of Jérémie Grisolia include Intelligence and National Security Alliance & Institut national des sciences appliquées.

High-Sensitivity Strain Gauge Based on a Single Wire of Gold Nanoparticles Fabricated by Stop-and-Go Convective Self-Assembly

Abstract: High-sensitivity strain gauges based on single wires of close-packed 14 nm colloidal gold nanoparticles are obtained by a novel variant of convective self-assembly (CSA). This CSA mode named stop-and-go CSA enables the fabrication of nanoparticle wires only a few micrometers wide, separated by distances that can be easily tuned over tens to hundreds of micrometers. Nanoparticle wires are obtained in a single step by direct deposition of nanoparticles from suspensions onto flexible polyethylene terephthalate films, without any lithographic prepatterning. When connected between two electrodes, such single nanoparticle wires function as miniature resistive strain gauges. The high sensitivity, repeatability, and robustness demonstrated by these single-wire strain gauges make them extremely promising for integration into micro-electromechanical systems or for high-resolution strain mapping.

The generic nature of SmartCut process for thin film transfer

Abstract: The Smart-Cut® process, based on ion implantation (hydrogen, helium) and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally-induced splitting. Cavity growth by the Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented.

A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si

Abstract: Proton implantation and thermal annealing of silicon result in the formation of a specific type of extended defects involving hydrogen, named “platelets” or “cavities.” These defects have been related to the exfoliation mechanism on which a newly developed process to transfer thin films of silicon onto various substrates is based. The density and the size of these platelets depend on the implantation and annealing conditions. In this letter, rigorous statistical methods based on transmission electron microscopy have been used to quantitatively study the thermal behavior of these defects. Upon annealing, it is shown that the cavities grow in size, reduce their density, while the overall volume they occupy remains constant. This phenomenon is due to a conservative ripening of the cavities. The transfer of hydrogen atoms from small to large cavities leads to a decrease of the elastic energy within the implanted layer while the strain locally increases around the projected range of the protons.

Monolayered Wires of Gold Colloidal Nanoparticles for High-Sensitivity Strain Sensing

Abstract: High-sensitivity resistive strain gauges based on electron tunneling in assemblies of gold colloidal nanoparticles are fabricated and characterized. The active area of these strain gauges consists in well-defined arrays of parallel, few micrometer wide wires of close-packed 18 nm gold nanoparticles. These nanoparticle wires are obtained by convective self-assembly (CSA) on flexible polyethylene terephtalate substrates, without any lithographic prepatterning. The fine control over the thickness and the width of the nanoparticle wires through the substrate temperature and the meniscus speed during the CSA process allows demonstrating the strong impact of the dimensionality (2D or 3D) of the nanoparticle assembly on the strain gauge sensitivity. Wires made of a single monolayer of nanoparticles turn out to give strain gauges about three times more sensitive than those made of multilayers. This work shows that the simplicity and versatility of convective self-assembly over other alternative methods make this ...

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Abstract: A study of the relative thermal stability of perfect and faulted dislocation loops formed during annealing of preamorphized silicon wafers has been carried out. A series of transmission electron microscopy experiments has been designed to study the influence of the ion dose, the annealing ambient and the proximity of a free surface on the evolution of both types of loops. Samples were implanted with either 150 keV Ge+ or 50 keV Si+ ions to a dose of 2×1015 cm−2 and annealed at 900 °C in N2, N2O, and O2. The calculations of formation energy of both types of dislocation loops show that, for defects of the same size, faulted dislocation loops (FDLs) are more energetically stable than perfect dislocation loops (PDLs) if their diameter is smaller than 80 nm and vice versa. The experimental results have been analyzed within the framework of the Ostwald ripening of two existing populations of interstitial defects. It is found that the defect ripening is nonconservative if the surface is close to the end of range...

Highly Dynamic Ligand Binding and Light Absorption Coefficient of Cesium Lead Bromide Perovskite Nanocrystals

Abstract: Lead halide perovskite materials have attracted significant attention in the context of photovoltaics and other optoelectronic applications, and recently, research efforts have been directed to nanostructured lead halide perovskites. Collodial nanocrystals (NCs) of cesium lead halides (CsPbX3, X = Cl, Br, I) exhibit bright photoluminescence, with emission tunable over the entire visible spectral region. However, previous studies on CsPbX3 NCs did not address key aspects of their chemistry and photophysics such as surface chemistry and quantitative light absorption. Here, we elaborate on the synthesis of CsPbBr3 NCs and their surface chemistry. In addition, the intrinsic absorption coefficient was determined experimentally by combining elemental analysis with accurate optical absorption measurements. 1H solution nuclear magnetic resonance spectroscopy was used to characterize sample purity, elucidate the surface chemistry, and evaluate the influence of purification methods on the surface composition. We fi...

Frontiers of silicon-on-insulator

Abstract: Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics. SOI technology offers significant advantages in design, fabrication, and performance of many semiconductor circuits. It also improves prospects for extending Si devices into the nanometer region (<10 nm channel length). In this article, we discuss methods of forming SOI wafers, their physical properties, and the latest improvements in controlling the structure parameters. We also describe devices that take advantage of SOI, and consider their electrical characteristics.

Carbonized Silk Fabric for Ultrastretchable, Highly Sensitive, and Wearable Strain Sensors

Abstract: A carbonized plain-weave silk fabric is fabricated into wearable and robust strain sensors, which can be stretched up to 500% and show high sensitivity in a wide strain range. This sensor can be assembled into wearable devices for detection of both large and subtle human activities, showing great potential for monitoring human motions and personal health.