J
Jeremy Junghans
Researcher at University of Arkansas
Publications - 21
Citations - 243
Jeremy Junghans is an academic researcher from University of Arkansas. The author has contributed to research in topics: Laser diode & Laser. The author has an hindex of 8, co-authored 21 publications receiving 234 citations.
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Journal ArticleDOI
Fabrication of Precise Fluidic Structures in LTCC
Fred Barlow,Jared Wood,Aicha Elshabini,Edward F. Stephens,Ryan Feeler,Greg Kemner,Jeremy Junghans +6 more
TL;DR: In this article, the authors describe the fabrication process used to create the precise channel and jet structures used in these LTCC-based coolers, as well as some of the challenges associated with these processes, including the erosion of the copper coolers by the coolant, a requirement for the use of deionized water within the system, and a significant CTE mismatch between the diode bar and the metal cooler.
Journal ArticleDOI
SiC JFET dc characteristics under extremely high ambient temperatures
Tsuyoshi Funaki,Juan Carlos Balda,Jeremy Junghans,Avinash Srikrishnan Kashyap,Fred Barlow,H. Alan Mantooth,Tsunenobu Kimoto,Takashi Hikihara +7 more
TL;DR: The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures, and the saturation current becomes 20% at450°C with respect to the value at the room temperature.
Proceedings ArticleDOI
Next-generation microchannel coolers
TL;DR: In this paper, a next-generation microchannel cooler has been developed for packaging laser diode arrays, which eliminates many of the problems associated with typical copper-based cooling designs and provides excellent thermal performance.
Proceedings ArticleDOI
Liquid metal heat sink for high-power laser diodes
TL;DR: In this article, the authors present an active heat sink (AHS) for thermal management of high-power laser diodes and other electronic and photonic components, which uses a liquid metal coolant flowing at high speed in a miniature closed and sealed loop.
Journal ArticleDOI
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
Tsuyoshi Funaki,Juan Carlos Balda,Jeremy Junghans,Anuwat Jangwanitlert,Sharmila Mounce,Fred Barlow,H. Alan Mantooth,Tsunenobu Kimoto,Takashi Hikihara +8 more
TL;DR: The authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor to demonstrate the suitability of the SiC devices for high-Temperature power converter applications.