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Jeremy Junghans

Researcher at University of Arkansas

Publications -  21
Citations -  243

Jeremy Junghans is an academic researcher from University of Arkansas. The author has contributed to research in topics: Laser diode & Laser. The author has an hindex of 8, co-authored 21 publications receiving 234 citations.

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Journal ArticleDOI

Fabrication of Precise Fluidic Structures in LTCC

TL;DR: In this article, the authors describe the fabrication process used to create the precise channel and jet structures used in these LTCC-based coolers, as well as some of the challenges associated with these processes, including the erosion of the copper coolers by the coolant, a requirement for the use of deionized water within the system, and a significant CTE mismatch between the diode bar and the metal cooler.
Journal ArticleDOI

SiC JFET dc characteristics under extremely high ambient temperatures

TL;DR: The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures, and the saturation current becomes 20% at450°C with respect to the value at the room temperature.
Proceedings ArticleDOI

Next-generation microchannel coolers

TL;DR: In this paper, a next-generation microchannel cooler has been developed for packaging laser diode arrays, which eliminates many of the problems associated with typical copper-based cooling designs and provides excellent thermal performance.
Proceedings ArticleDOI

Liquid metal heat sink for high-power laser diodes

TL;DR: In this article, the authors present an active heat sink (AHS) for thermal management of high-power laser diodes and other electronic and photonic components, which uses a liquid metal coolant flowing at high speed in a miniature closed and sealed loop.
Journal ArticleDOI

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

TL;DR: The authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor to demonstrate the suitability of the SiC devices for high-Temperature power converter applications.