At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

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Superconducting Interfaces Between Insulating Oxides

Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. Different symmetry constraints can be used to design structures exhibiting phenomena not found in the bulk constituents. A characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale. Examples such as interface superconductivity, magneto-electric coupling, and the quantum Hall effect in oxide heterostructures are representative of the scientific and technological opportunities in this rapidly emerging field.

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Emergent phenomena at oxide interfaces

Interfaces between complex oxides are emerging as one of the most interesting systems in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of new and unusual electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the charge carrier density in determining the systems' ground states. A particularly fascinating system is the conducting interface between the band insulators LaAlO(3) and SrTiO(3) (ref. 3). Recently two possible ground states have been experimentally identified: a magnetic state and a two-dimensional superconducting condensate. Here we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition between a two-dimensional superconducting state and an insulating state. Analyses of the magnetotransport properties in the insulating state are consistent with weak localization and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of new mesoscopic superconducting circuits.

Electric field control of the LaAlO3/SrTiO3 interface ground state.

Complex transition metal oxides span a wide range of crystalline structures and play host to an incredible variety of physical phenomena. High dielectric permittivities, piezo-, pyro-, and ferroelectricity are just a few of the functionalities offered by this class of materials, while the potential for applications of the more exotic properties like high temperature superconductivity and colossal magnetoresistance is still waiting to be fully exploited. With recent advances in deposition techniques, the structural quality of oxide heterostructures now rivals that of the best conventional semiconductors, taking oxide electronics to a new level. Such heterostructures have enabled the fabrication of artificial multifunctional materials. At the same time they have exposed a wealth of phenomena at the boundaries where compounds with different structural instabilities and electronic properties meet, giving unprecedented access to new physics emerging at oxide interfaces. Here we highlight some of these exciting...

Interface Physics in Complex Oxide Heterostructures

Increasing the carrier density of a material to the limit at which superconductivity can be induced has been a long-standing challenge. This is now realized in an insulator by using an electric-double-layer gate in an organic electrolyte. Electric field control of charge carrier density has long been a key technology to tune the physical properties of condensed matter, exploring the modern semiconductor industry. One of the big challenges is to increase the maximum attainable carrier density so that we can induce superconductivity in field-effect-transistor geometry. However, such experiments have so far been limited to modulation of the critical temperature in originally conducting samples because of dielectric breakdown1,2,3,4. Here we report electric-field-induced superconductivity in an insulator by using an electric-double-layer gating in an organic electrolyte5. Sheet carrier density was enhanced from zero to 1014 cm−2 by applying a gate voltage of up to 3.5 V to a pristine SrTiO3 single-crystal channel. A two-dimensional superconducting state emerged below a critical temperature of 0.4 K, comparable to the maximum value for chemically doped bulk crystals6, indicating this method as promising for searching for unprecedented superconducting states.

Electric-field-induced superconductivity in an insulator

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials.

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Magnetic effects at the interface between nonmagnetic oxides

The existence of one-dimensional (1D) electronic states between self-organized Pt nanowires spaced 1.6 or 2.4 nm apart on a Ge(001) surface is revealed by low-temperature scanning tunneling microscopy. These perfectly straight Pt nanowires act as barriers for a surface state (located just below the Fermi level) of the underlying terrace. The energy positions of the 1D electronic states are in good agreement with the energy levels of a quantum particle in a well. Spatial maps of the differential conductivity of the 1D electronic states conclusively reveal that these states are exclusively present in the troughs between the Pt nanowires.

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Quantum confinement between self-organized Pt nanowires on Ge(001).

http://absimage.aps.org/image/MAR06/MWS_MAR06-2005-000282.pdf

Quantum confinement between self-organized Pt nanowires on Ge(001)

Diffusion and binding of CO on Pt nanowires

The diffusion and binding of CO molecules on self organized Pt nanowires on Ge(0 0 1), have been studied by room temperature scanning tunneling microscopy. CO molecules are found to bind at the bridge position of the Pt dimers. The CO molecules are mobile at room temperature and perform an “unrestricted” one-dimensional random walk in defect-free regions of the Pt nanowires.

Jeroen Huijben

Papers

Magnetic effects at the interface between nonmagnetic oxides

Quantum confinement between self-organized Pt nanowires on Ge(001).

Quantum confinement between self-organized Pt nanowires on Ge(001)

Diffusion and binding of CO on Pt nanowires

Diffusion and Binding of CO on Pt nanowires