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Design Of Analog Cmos Integrated Circuits

IEEE International Solid-State Circuits Conference

Reactive matching is extended to wide bandwidths using the impedance property of LC-ladder filters. In this paper, we present a systematic method to design wideband low-noise amplifiers. An SiGe amplifier with on-chip matching network spanning 3-10 GHz delivers 21-dB peak gain, 2.5-dB noise figure, and -1-dBm input IP3 at 5 GHz, with a 10-mA bias current.

A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network

In this paper, synthesis and design techniques of dual- and triple-passband filters with Chebyshev and quasi-elliptic symmetric frequency responses are proposed and demonstrated for the first time on the basis of substrate integrated waveguide technology. The inverter coupled resonator section is first investigated, and then a dual-passband Chebyshev filter, a triple-passband Chebyshev filter, and a dual-passband quasi-elliptic filter, which consist of the inverter coupled resonator sections, are synthesized from the generalized low-pass prototypes having Chebyshev or quasi-elliptic responses, respectively. Subsequently, theses filters with a symmetric response are designed and implemented using the substrate integrated waveguide scheme over the -band frequency range. The inverter coupled resonator sections composed of side-by-side horizontally oriented substrate integrated waveguide cavities are coupled, in turn, by post-wall irises. 50-Omega microstrip lines are used to directly excite the filters. Measured results are presented and compared to those simulated by Ansoft's High Frequency Structure Simulator (HFSS) software package. A good agreement between the simulated and measured results is observed, which has also validated the proposed concept of design and synthesis with the substrate integration technology.

Dual-Band and Triple-Band Substrate Integrated Waveguide Filters With Chebyshev and Quasi-Elliptic Responses

A new fully integrated, dual-band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of n-core cross-coupled Colpitts VCOs and was implemented in 0.18 mum CMOS technology with 0.8 V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. The VCO has two control inputs, one for continuous control of the output frequency and one for band switching. This VCO is configured with 5 GHz and 12 GHz frequency bands with differential outputs. The dual-band VCO operates in 4.78-5.19 GHz and 12.19-12.61 GHz. The phase noises of the VCO operating at 5.11 and 12.2 GHz are -117.16 dBc/Hz and -112.15 dBc/Hz at 1 MHz offset, respectively, while the VCO draws 3.2/2.72 mA and 2.56/2.18 mW consumption at low/high frequency band from a 0.8 V supply.

A Dual-Band CMOS Voltage-Controlled Oscillator Implemented With Dual-Resonance LC Tank

A novel time-domain reflectometry technique is developed for detecting the physical structures of transmission lines by using arbitrary waveforms. By discretizing both incident and reflected waves, we formulate the reflection coefficient of a nonuniform transmission line as a polynomial ratio in the Z-transform, wherein the numerator and denominator represent the reflected and incident waves, respectively. A reconstruction scheme is derived to obtain the characteristic impedance profile of a transmission line. Some examples are presented to illustrate the validity of this new technique.

Time-domain reflectometry using arbitrary incident waveforms

A fully integrated, 5.6 GHz low-phase noise Colpitts quadrature voltage-controlled oscillator (VCO/QVCO) is presented. This QVCO is a complementary cross-coupled voltage-controlled Colpitts oscillator with a three-bit switched capacitor array parallel to the inductor to form LC-resonant tank and was implemented in TSMC 0.18 μm CMOS technology with 1.8 V supply voltage. Without buffer circuits, measured results achieve a tunable frequency range from 4.81 to 5.75 GHz, corresponding to 17.8%, a phase noise of −121 dBc/Hz at 1 MHz offset frequency from 5.64 GHz, while the QVCO draws 3.8 mA current and 6.84 mW consumption, respectively. Including pads, the chip area is 1.046 mm2 (1.35 × 0.775 mm2). The output power is −10.04 dBm with 50-Ω termination at the frequency of 5.64 GHz, and the calculated figure of merit is −187.7 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1490–1493, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27629

A fully integrated 5.6 GHz low‐phase noise colpitts VCO/QVCO using programmable switched codes

A 5.6-GHz 1-V Low Power Balanced Colpitts VCO in 0.18-µm CMOS Process

A new fully integrated, low power voltage controlled oscillator and divider for Bluetooth and Miracast application are presented. The power consumption use charge recycling technique to reduced current from the divider. This circuit was implemented in 0.18 um CMOS technique with 1.8 V supply voltage. The broadband CMOS double-balance mixer for RF receiver is presented. The broadband mixer is fabricated with the 0.18 µm CMOS process. Measurement of the CMOS mixer is performed; input return loss is higher than 8.5 dB. For VCO with divider measured results indicate the frequency is tunable from 1.91 GHz to 2.07 GHz, corresponding to 13 %. The phase noise of the VCO operating at 2 GHz is -116.8 dBc/Hz at 1 MHz offset, while the VCO draws 2.61 mA and 4.7 mW consumption at frequency band from a 1.8 V supply. Including pads. The output power is -15.85 dBm with 50- O termination at the frequency o f of 2 GHz and the calculated FOM (figure of merit) is -176.

Jhin-Fang Huang

Papers

A Dual-Band CMOS Voltage-Controlled Oscillator Implemented With Dual-Resonance LC Tank

Time-domain reflectometry using arbitrary incident waveforms

A fully integrated 5.6 GHz low‐phase noise colpitts VCO/QVCO using programmable switched codes

A 5.6-GHz 1-V Low Power Balanced Colpitts VCO in 0.18-µm CMOS Process

Low Power VCO and Mixer for Computing Miracast and Mobile Bluetooth Applications