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Author

Ji-Sang Park

Other affiliations: KAIST, Yonsei University, Imperial College London  ...read more
Bio: Ji-Sang Park is an academic researcher from Kyungpook National University. The author has contributed to research in topics: Perovskite (structure) & Band gap. The author has an hindex of 28, co-authored 83 publications receiving 3350 citations. Previous affiliations of Ji-Sang Park include KAIST & Yonsei University.


Papers
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Journal ArticleDOI
TL;DR: In this article, the effect of alloying FA0.85Cs0.15PbI3 with CsPbIsI3 was investigated, and it was shown that the effective tolerance factor can be tuned and the stability of the photoactive α-phase of the mixed solid-state perovskite alloys FA1-xCsxPbisI3 is enhanced.
Abstract: Goldschmidt tolerance factor (t) is an empirical index for predicting stable crystal structures of perovskite materials. A t value between 0.8 and 1.0 is favorable for cubic perovskite structure, and larger (>1) or smaller (<0.8) values of tolerance factor usually result in nonperovskite structures. CH(NH2)2PbI3 (FAPbI3) can exist in the perovskite α-phase (black phase) with good photovoltaic properties. However, it has a large tolerance factor and is more stable in the hexagonal δH-phase (yellow phase), with δH-to-α phase-transition temperature higher than room temperature. On the other hand, CsPbI3 is stabilized to an orthorhombic structure (δO-phase) at room temperature due to its small tolerance factor. We find that, by alloying FAPbI3 with CsPbI3, the effective tolerance factor can be tuned, and the stability of the photoactive α-phase of the mixed solid-state perovskite alloys FA1–xCsxPbI3 is enhanced, which is in agreement with our first-principles calculations. Thin films of the FA0.85Cs0.15PbI3 p...

1,483 citations

Journal ArticleDOI
TL;DR: In this article, the authors showed that there is a large disparity between the defects in Cu-and Ag-based kesterite semiconductors, i.e., the CuZn or CuCd acceptor defects have high concentration and are the dominant defects in either Cu2ZnSn(S,Se)4 or Cu2CdSnS4.
Abstract: The development of kesterite Cu2ZnSn(S,Se)4 thin-film solar cells is currently hindered by the large deficit of open-circuit voltage (Voc), which results from the easy formation of CuZn antisite acceptor defects. Suppressing the formation of CuZn defects, especially near the absorber/buffer interface, is thus critical for the further improvement of kesterite solar cells. In this paper, it is shown that there is a large disparity between the defects in Cu- and Ag-based kesterite semiconductors, i.e., the CuZn or CuCd acceptor defects have high concentration and are the dominant defects in Cu2ZnSn(S,Se)4 or Cu2CdSnS4, but the AgZn acceptor has only a low concentration and the dominant defects are donors in Ag2ZnSnS4. Therefore, the Cu-based kesterites always show p-type conductivity, while the Ag-based kesterites show either intrinsic or weak n-type conductivity. Based on this defect disparity and calculated band alignment, it is proposed that the Voc limit of the kesterite solar cells can be overcome by alloying Cu2ZnSn(S,Se)4 with Ag2ZnSn(S,Se)4, and the composition-graded (Cu,Ag)2ZnSn(S,Se)4 alloys should be ideal light-absorber materials for achieving higher efficiency kesterite solar cells.

261 citations

Journal ArticleDOI
TL;DR: In this paper, the evolution in the understanding of point defect behavior from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices, is reviewed.
Abstract: Control of defect processes in photovoltaic materials is essential for realizing high-efficiency solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the Fermi level and enable semiconducting p–n junctions; however, fundamental limits to doping exist in many compounds. Optical transitions from defect states can enhance photocurrent generation through sub-bandgap absorption; however, these defect states are also often responsible for carrier trapping and non-radiative recombination events that limit the voltage in operating solar cells. Many classes of materials, including metal oxides, chalcogenides and halides, are being examined for next-generation solar energy applications, and each technology faces distinct challenges that could benefit from point defect engineering. Here, we review the evolution in the understanding of point defect behaviour from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices. We focus on the chemical bonding that underpins the defect chemistry and the atomistic processes associated with the photophysics of charge-carrier generation, trapping and recombination in solar cells. Finally, we outline general principles to enable defect control in complex semiconducting materials. Point defects have a key role in determining the performance of photovoltaic materials. In this Review, we assess defect processes in a range of photovoltaic materials and outline how point defect engineering could be used to improve the efficiency of solar cells.

260 citations

Journal ArticleDOI
TL;DR: By fluorine substitution on the para position in PEA to form 4-fluorophenethylammonium (F-PEA), the average phenyl ring centroid-centroid distances in the organic layer become shorter with better aligned stacking of perovskite sheets, resulting in enhanced orbital interactions and charge transport across adjacent inorganic layers as well as increased carrier lifetime and reduced trap density.
Abstract: Organic-inorganic halide perovskites incorporating two-dimensional (2D) structures have shown promise for enhancing the stability of perovskite solar cells (PSCs). However, the bulky spacer cations often limit charge transport. Here, we report on a simple approach based on molecular design of the organic spacer to improve the transport properties of 2D perovskites, and we use phenethylammonium (PEA) as an example. We demonstrate that by fluorine substitution on the para position in PEA to form 4-fluorophenethylammonium (F-PEA), the average phenyl ring centroid-centroid distances in the organic layer become shorter with better aligned stacking of perovskite sheets. The impact is enhanced orbital interactions and charge transport across adjacent inorganic layers as well as increased carrier lifetime and reduced trap density. Using a simple perovskite deposition at room temperature without using any additives, we obtained a power conversion efficiency of >13% for (F-PEA)2MA4Pb5I16-based PSCs. In addition, the thermal stability of 2D PSCs based on F-PEA is significantly enhanced compared to those based on PEA.

236 citations

Journal ArticleDOI
15 Apr 2020-Nature
TL;DR: The approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices, and reveals a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters.
Abstract: Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices1,2. This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively3) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects4. Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance5, perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance6. The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions7 and with local strain8, both of which make devices less stable9. Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process10,11, we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices. Photoemission electron microscopy images of trap states in halide peroskites, spatially correlated with their structural and compositional factors, may help in managing power losses in optoelectronic applications.

213 citations


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Journal ArticleDOI
TL;DR: In this paper, the triple cation perovskite photovoltaics with inorganic cesium were shown to be thermally more stable, contain less phase impurities and are less sensitive to processing conditions.
Abstract: Today's best perovskite solar cells use a mixture of formamidinium and methylammonium as the monovalent cations. With the addition of inorganic cesium, the resulting triple cation perovskite compositions are thermally more stable, contain less phase impurities and are less sensitive to processing conditions. This enables more reproducible device performances to reach a stabilized power output of 21.1% and ∼18% after 250 hours under operational conditions. These properties are key for the industrialization of perovskite photovoltaics.

3,470 citations

Journal ArticleDOI
TL;DR: In this paper, an organic halide salt phenethylammonium iodide (PEAI) was used on HC(NH2)2-CH3NH3 mixed perovskite films for surface defect passivation.
Abstract: In recent years, the power conversion efficiency of perovskite solar cells has increased to reach over 20%. Finding an effective means of defect passivation is thought to be a promising route for bringing further increases in the power conversion efficiency and the open-circuit voltage (VOC) of perovskite solar cells. Here, we report the use of an organic halide salt phenethylammonium iodide (PEAI) on HC(NH2)2–CH3NH3 mixed perovskite films for surface defect passivation. We find that PEAI can form on the perovskite surface and results in higher-efficiency cells by reducing the defects and suppressing non-radiative recombination. As a result, planar perovskite solar cells with a certificated efficiency of 23.32% (quasi-steady state) are obtained. In addition, a VOC as high as 1.18 V is achieved at the absorption threshold of 1.53 eV, which is 94.4% of the Shockley–Queisser limit VOC (1.25 V). Planar perovskite solar cells that have been passivated using the organic halide salt phenethylammonium iodide are shown to have suppressed non-radiative recombination and operate with a certified power conversion efficiency of 23.3%.

3,064 citations

Journal ArticleDOI
14 Oct 2016-Science
TL;DR: This work shows that the small and oxidation-stable rubidium cation (Rb+) can be embedded into a “cation cascade” to create perovskite materials with excellent material properties and achieved stabilized efficiencies of up to 21.6% on small areas.
Abstract: All of the cations currently used in perovskite solar cells abide by the tolerance factor for incorporation into the lattice. We show that the small and oxidation-stable rubidium cation (Rb + ) can be embedded into a “cation cascade” to create perovskite materials with excellent material properties. We achieved stabilized efficiencies of up to 21.6% (average value, 20.2%) on small areas (and a stabilized 19.0% on a cell 0.5 square centimeters in area) as well as an electroluminescence of 3.8%. The open-circuit voltage of 1.24 volts at a band gap of 1.63 electron volts leads to a loss in potential of 0.39 volts, versus 0.4 volts for commercial silicon cells. Polymer-coated cells maintained 95% of their initial performance at 85°C for 500 hours under full illumination and maximum power point tracking.

3,034 citations

Journal ArticleDOI
17 Feb 2017-Science
TL;DR: A contact-passivation strategy using chlorine-capped TiO2 colloidal nanocrystal film that mitigates interfacial recombination and improves interface binding in low-temperature planar solar cells is reported.
Abstract: Planar perovskite solar cells (PSCs) made entirely via solution processing at low temperatures (<150°C) offer promise for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. However, these PSCs require an electron-selective layer that performs well with similar processing. We report a contact-passivation strategy using chlorine-capped TiO2 colloidal nanocrystal film that mitigates interfacial recombination and improves interface binding in low-temperature planar solar cells. We fabricated solar cells with certified efficiencies of 20.1 and 19.5% for active areas of 0.049 and 1.1 square centimeters, respectively, achieved via low-temperature solution processing. Solar cells with efficiency greater than 20% retained 90% (97% after dark recovery) of their initial performance after 500 hours of continuous room-temperature operation at their maximum power point under 1-sun illumination (where 1 sun is defined as the standard illumination at AM1.5, or 1 kilowatt/square meter).

1,912 citations

Journal ArticleDOI
TL;DR: The fundamentals, recent research progress, present status, and views on future prospects of perovskite-based photovoltaics, with discussions focused on strategies to improve both intrinsic and extrinsic (environmental) stabilities of high-efficiency devices are described.
Abstract: The photovoltaics of organic–inorganic lead halide perovskite materials have shown rapid improvements in solar cell performance, surpassing the top efficiency of semiconductor compounds such as CdTe and CIGS (copper indium gallium selenide) used in solar cells in just about a decade. Perovskite preparation via simple and inexpensive solution processes demonstrates the immense potential of this thin-film solar cell technology to become a low-cost alternative to the presently commercially available photovoltaic technologies. Significant developments in almost all aspects of perovskite solar cells and discoveries of some fascinating properties of such hybrid perovskites have been made recently. This Review describes the fundamentals, recent research progress, present status, and our views on future prospects of perovskite-based photovoltaics, with discussions focused on strategies to improve both intrinsic and extrinsic (environmental) stabilities of high-efficiency devices. Strategies and challenges regardi...

1,720 citations