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Jiali Fan

Researcher at Shanghai Jiao Tong University

Publications -  9
Citations -  81

Jiali Fan is an academic researcher from Shanghai Jiao Tong University. The author has contributed to research in topics: Thin-film transistor & Transistor. The author has an hindex of 4, co-authored 9 publications receiving 52 citations.

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Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics

TL;DR: A user-friendly tool was developed to provide an interactive way for convenient parameter extraction and the model is continuous from the off-state and subthreshold regimes to the above-threshold regime, avoiding the convergence problems when being used in SPICE circuit simulations.
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Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

TL;DR: In this article, a gate driver on array (GOA) with a pulse gating scheme is proposed, consisting of 13 TFTs and 1 capacitor, to avoid long term continuous bias stressing of the TFT.
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Displaying-Synchronous Open-Loop External Compensation for Active-Matrix Light Emitting Diode Displays

TL;DR: The simulation results on single pixels and overall displays with various input images and videos prove the capability of the proposed DSOL method for compensating the image quality degradation without affecting normal displaying.
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DC Compact Model for Subthreshold Operated Organic Field-Effect Transistors

TL;DR: In this article, a compact model considering both non-exponential gate-voltage-dependent diffusion current and additional drift current is developed to accurately describe the electrical behaviors of organic field-effect transistors (OFETs) across the whole sub-reshold regime.
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Facile Four-Mask Processes for Organic Thin-Film Transistor Integration Structure With Metal Interconnect

TL;DR: In this paper, a modified SU8 formulation is developed for forming the passivation layer on top of the organic thin film transistor with small molecule organic semiconductor (OSC), and via holes for interconnect metallization are easily formed, and the whole integration structure can be completed with facile four mask processes.