Jialong Zhao

Bio: Jialong Zhao is an academic researcher from Guangxi University. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 38, co-authored 182 publications receiving 5695 citations. Previous affiliations of Jialong Zhao include University of Washington & Yanshan University.

Correction: Corrigendum: The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes

Abstract: Through introducing a probe layer of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium (FIrpic) between QD emission layer and 4, 4-N, N- dicarbazole-biphenyl (CBP) hole transport layer, we successfully demonstrate that the electroluminescence (EL) mechanism of the inverted quantum dot light-emitting diodes (QD-LEDs) with a ZnO nanoparticle electron injection/transport layer should be direct charge-injection from charge transport layers into the QDs. Further, the EL from QD-LEDs at sub-bandgap drive voltages is achieved, which is in contrast to the general device in which the turn-on voltage is generally equal to or greater than its bandgap voltage (the bandgap energy divided by the electron charge). This sub-bandgap EL is attributed to the Auger-assisted energy up-conversion hole-injection process at the QDs/organic interface. The high energy holes induced by Auger-assisted processes can be injected into the QDs at sub-bandgap applied voltages. These results are of important significance to deeply understand the EL mechanism in QD-LEDs and to further improve device performance.

Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer.

Abstract: We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.

Controlled synthesis, formation mechanism, and great enhancement of red upconversion luminescence of NaYF4:Yb3+, Er3+ nanocrystals/submicroplates at low doping level.

Abstract: Strong red upconversion luminescence of rare-earth ions doped in nanocrystals is desirable for the biological/biomedical applications. In this paper, we describe the great enhancement of red upconversion emission (4F9/2 → 4I15/2 transition of Er3+ ion) in NaYF4:Yb3+, Er3+ nanocrystals at low doping level, which is ascribed to the effectiveness of the multiphonon relaxation process due to the existence of citrate as a chelator and cross relaxation between Er3+ ions. The dissolution−recrystallization transformation, governing both the intrinsic crystalline phase (cubic and/or hexagonal phase) and the growth regime (thermodynamic vs kinetic), is responsible for the phase control of the NaYF4 crystals. The possible formation mechanism of the NaYF4 crystals and the role of trisodium citrate which acts as a chelating agent and shape modifier are discussed in detail. It is also found that the α → β phase transition is favored by the high molar ratio of fluoride to lanthanide and high hydrothermal temperature as ...

Photoluminescence Temperature Dependence, Dynamics, and Quantum Efficiencies in Mn2+-Doped CsPbCl3 Perovskite Nanocrystals with Varied Dopant Concentration

Abstract: A series of Mn2+-doped CsPbCl3 nanocrystals (NCs) was synthesized using reaction temperature and precursor concentration to tune Mn2+ concentrations up to 14%, and then studied using variable-temperature photoluminescence (PL) spectroscopy. All doped NCs show Mn2+ 4T1g → 6A1g d–d luminescence within the optical gap coexisting with excitonic luminescence at the NC absorption edge. Room-temperature Mn2+ PL quantum yields increase with increased doping, reaching ∼60% at ∼3 ± 1% Mn2+ before decreasing at higher concentrations. The low-doping regime is characterized by single-exponential PL decay with a concentration-independent lifetime of 1.8 ms, reflecting efficient luminescence of isolated Mn2+. At elevated doping, the decay is shorter, multiexponential, and concentration-dependent, reflecting the introduction of Mn2+–Mn2+ dimers and energy migration to traps. A large, anomalous decrease in Mn2+ PL intensity is observed with decreasing temperature, stemming from the strongly temperature-dependent exciton l...

Temperature-Dependent Photoluminescence of CdSe-Core CdS/CdZnS/ZnS-Multishell Quantum Dots

Abstract: The photoluminescence (PL) spectra of CdSe-core CdS/CdZnS/ZnS-multishell quantum dots (QDs) were studied to understand the radiative and nonradiative relaxation processes in the temperature range from 80 to 360 K. The mechanism of temperature-dependent nonradiative relaxation processes in the CdSe QDs with changing the shell structures was found to evolve from thermal activation of carrier trapping by surface defects/traps in CdSe core QDs to the multiple longitudinal-optical (LO) phonon-assisted thermal escape of carriers in the core/shell QDs. An increase in PL intensity with increasing temperature was clearly observed in the core/shell QDs with a thick CdS monoshell and a CdS/ZnCdS/ZnS multishell. The PL enhancement was considered to come from delocalization of charge carriers localized at the CdSe/CdS interface with the potential depth of ∼30 meV. The experimental results indicated that the improvement of PL quantum efficiency in CdSe-core CdS/CdZnS/ZnS-multishell QDs could be understood in terms of t...

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

Principles Of Fluorescence Spectroscopy

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Quantum Dot Light-Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides (CsPbX3)

Abstract: Novel quantum-dot light-emitting diodes based on all-inorganic perovskite CsPbX3 (X = Cl, Br, I) nanocrystals are reported. The well-dispersed, single-crystal quantum dots (QDs) exhibit high quantum yields, and tunable light emission wavelength. The demonstration of these novel perovskite QDs opens a new avenue toward designing optoelectronic devices, such as displays, photodetectors, solar cells, and lasers.

Emergence of colloidal quantum-dot light-emitting technologies

Abstract: This Review article summarizes the key advantages of using quantum dots (QDs) as luminophores in light-emitting devices (LEDs) and outlines the operating mechanisms of four types of QD-LED. The key scientific and technological challenges facing QD-LED commercialization are identified, together with on-going strategies to overcome these challenges.

Solution-processed, high-performance light-emitting diodes based on quantum dots

Abstract: Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades. However, the overall performance of solution-processed LEDs--including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions-remains inferior to that of the best vacuum-deposited organic LEDs. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm(-2)), and a long operational lifetime of more than 100,000 hours at 100 cd m(-2), making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.