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Jiandong Ye

Bio: Jiandong Ye is an academic researcher from Nanjing University. The author has contributed to research in topics: Materials science & Chemical vapor deposition. The author has an hindex of 32, co-authored 280 publications receiving 4471 citations. Previous affiliations of Jiandong Ye include Singapore Science Park & Australian National University.


Papers
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Journal ArticleDOI
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
Abstract: Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.

306 citations

Journal ArticleDOI
TL;DR: In this paper, the authors show that the visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction, where the tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space charge-limited current conduction dominated the carrier transport at higher bias.
Abstract: The distinct visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction. The EL peak energy coincided well with the deep-level photoluminescence of ZnO, suggesting that the EL emission was originated from the radiative recombination via deep-level defects in n-ZnO layers. The transport mechanisms of the diodes have been discussed with the characteristics of current-voltage (I-V) and light-output–voltage (L-V), in terms of the energy band diagram of ZnO∕Si heterojunction. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. Light-output–current (L-I) characteristic of the diode followed a power law such as L∼Im, which showed a superlinear behavior at low injection current and became almost linear due to the saturation of nonradiative recombination centers at high current level.

230 citations

Journal ArticleDOI
TL;DR: In this article, the surface morphology with different grain structures has been used to characterize the green photoluminescence of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures.
Abstract: Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with different grain structures has strong influence on the green photoluminescence of ZnO. When large discrete islands or structureless overgrowth cover the rough surface, broad green emissions around 500 nm go beyond the ultraviolet (UV) emission band; whereas, when the surface is packed closely with small grains, only weak green emission is observed with a red-shift to 528 nm. This variation of green emissions is ascribed to changes in the charge states of oxygen vacancies, which is strongly dependent on the surface morphology and grain structures. Based on the grain boundary defect model, two possible recombination processes for the green emission are proposed and discussed in detail.

208 citations

Journal ArticleDOI
TL;DR: In this paper, the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZNO bulk substrate was reported.
Abstract: We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied.

162 citations

Journal ArticleDOI
TL;DR: Single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated, holding promise for developing high performance solar-blind photodetectors.
Abstract: The metastable α-phase Ga2O3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga2O3 remains challenging. To this end, single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (1120) substrates for the first time and a high performance Au/α-Ga2O3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 103 and a detectivity of 9.66 × 1012 cm Hz1/2 W–1. Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W–1 at −5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/Ga2O3 and Ga2O3/ZnO heterointerfaces. The device also allows avalanche multiplication processes in...

141 citations


Cited by
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Journal ArticleDOI
TL;DR: This review summarizes the most recent advances in the field over the past 4 years, specifically highlighting new and interesting discoveries in tissue engineering and drug delivery applications.
Abstract: Utilization of polymers as biomaterials has greatly impacted the advancement of modern medicine. Specifically, polymeric biomaterials that are biodegradable provide the significant advantage of being able to be broken down and removed after they have served their function. Applications are wide ranging with degradable polymers being used clinically as surgical sutures and implants. In order to fit functional demand, materials with desired physical, chemical, biological, biomechanical and degradation properties must be selected. Fortunately, a wide range of natural and synthetic degradable polymers has been investigated for biomedical applications with novel materials constantly being developed to meet new challenges. This review summarizes the most recent advances in the field over the past 4 years, specifically highlighting new and interesting discoveries in tissue engineering and drug delivery applications.

1,712 citations

Journal ArticleDOI
TL;DR: The most relevant biopolymer-based hydrogel systems, the different methods of preparation, as well as an in depth overview of the applications in the field of tissue engineering will be given.

1,426 citations

Journal ArticleDOI
TL;DR: The ZnO with oxygen vacancies are found to be efficient for photodecomposition of 2,4-dichlorophenol under visible light irradiation and a narrowing bandgap can be confirmed by the enhancement of the photocurrent response when theZnO was irradiated with visible light.
Abstract: Oxygen vacancies in crystal have important impacts on the electronic properties of ZnO. With ZnO2 as precursors, we introduce a high concentration of oxygen vacancies into ZnO successfully. The obtained ZnO exhibits a yellow color, and the absorption edge shifts to longer wavelength. Raman and XPS spectra reveal that the concentration of oxygen vacancies in the ZnO decreased when the samples are annealed at higher temperature in air. It is consistent with the theory calculation. The increasing of oxygen vacancies results in a narrowing bandgap and increases the visible light absorption of the ZnO. The narrowing bandgap can be confirmed by the enhancement of the photocurrent response when the ZnO was irradiated with visible light. The ZnO with oxygen vacancies are found to be efficient for photodecomposition of 2,4-dichlorophenol under visible light irradiation.

1,213 citations

Journal ArticleDOI
TL;DR: This article is focused on nanosized HAp, although recent articles on microsized particles, especially those assembled from nanoparticles and/or nanocrystals, have been reviewed for comparison.

1,036 citations

Book ChapterDOI
27 Jan 2010

878 citations