Jibin Zou

TL;DR: In this article, the characteristics of gate-all-around (GAA) Si nanowire (NW) metal-oxide-semiconductor field effect transistors (SNWTs) are analyzed and experimentally investigated.

TL;DR: In this paper, a simulation approach that fully integrates the dynamic properties of ac trap effects is presented for accurate simulation of RTN in digital circuits, e.g., failure probabilities of SRAM cells and jitters of ring oscillators, are then evaluated by the simulations and verified against predictions based on the ac trap occupancy probability.

TL;DR: In this article, an analytical model for parasitic gate capacitances in gate-all-around cylindrical silicon nanowire MOSFETs is developed for the first time.

TL;DR: It is found that the AC RTN statistics largely deviates from traditional DC RTN, in terms of different distribution functions and the strong dependence on AC signal frequency, which directly impacts on the accurate prediction of circuit stability and variability.

TL;DR: In this paper, the major physical effects caused by gate oxide traps in MOSFETs have been integrated for the first time by a proposed unified approach in realistic manners based on industry-standard EDA tools, aiming at practical trap-aware device/circuit co-design.