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Jihong Bian

Bio: Jihong Bian is an academic researcher from Fudan University. The author has contributed to research in topics: Neuromorphic engineering & System integration. The author has co-authored 1 publications.

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Journal ArticleDOI
TL;DR: In this paper, a recent progress in neuromorphic computing enabled by emerging two-dimensional (2D) materials is introduced from devices design and hardware implementation to system integration, shedding light on its great potential for artificial intelligence applications.
Abstract: Conventional computing based on von Neumann architecture cannot satisfy the demands of artificial intelligence (AI) applications anymore. Neuromorphic computing, emulating structures and principles based on the human brain, provides an alternative and promising approach for efficient and low consumption information processing. Herein, recent progress in neuromorphic computing enabled by emerging two-dimensional (2D) materials is introduced from devices design and hardware implementation to system integration. Especially, the advances of hopeful artificial synapses and neurons utilizing the resistive-switching-based devices, 2D ferroelectric-based memories and transistors, ultrafast flash, and promising transistors with attractive structures are highlighted. The device features, performance merits, bottlenecks, and possible improvement strategies, along with large-scale brain-inspired network fulfillment, are presented. Challenges and prospects of system application for neuromorphic computing are briefly discussed, shedding light on its great potential for AI.

26 citations


Cited by
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Journal ArticleDOI
11 Feb 2022-ACS Nano
TL;DR: A dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) is explored as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces.
Abstract: In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS2) and ambipolar (MoTe2) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.

32 citations

Journal ArticleDOI
13 Sep 2022-ACS Nano
TL;DR: In this article , the authors provide a comprehensive understanding of ferroelectrics-integrated 2D devices and discuss the challenges of applying them into commercial electronic circuits, where the application of 2D van der Waals (vdW) ferroelectric diodes is particularly emphasized.
Abstract: Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

13 citations

Journal ArticleDOI
TL;DR: In this article , a comprehensive review of 2D-inorganic/organic charge transfer (CT) photodetectors is presented, with a focus on optical biology, synapsis, and machine vision applications.
Abstract: 2D materials possess superior optoelectronic properties, such as ultrahigh mobility and broadband photoresponse, making them one of the most vital platforms for diversified photodetectors. However, atomic thickness 2D materials usually suffer from intrinsic low absorption. To promote the photodetector performance, a feasible method is to integrate the 2D materials with low-cost, flexible, and tunable organics that form a charge transfer (CT) heterojunction. As results, in-depth multifunctional CT 2D-inorganic/organic detector exhibits extended functions such as low-power consumption, in-memory detection, and optical-bio synapse to meet the demand of contemporary photonic cell. Particularly, the progresses in wafer-scale monocrystal of both 2D and organic materials render vast potential applications with operation frequencies ranging from ultraviolet to terahertz. Here, the recent advances of 2D-inorganic/organic CT photodetectors are comprehensively reviewed by several classifications. Future developments and applications in optical biology, synapsis, and machine vision are also highlighted.

11 citations

Journal ArticleDOI
TL;DR: The high viability of strong donor strategy is showcased by demonstrating flexible TOSTs with stable synaptic function after repeated mechanical bending as well as organic synapses capable of simulating image information processing.
Abstract: Organic artificial synapses are becoming the most desirable format for neuromorphic computing due to their highly tunable resistive states. However, repressively low analog switching range, inferior memory retention, and operational instability greatly hinder the further development of organic synapses. Herein, two donor‐acceptor copolymers consisting of electron‐deficient isoindigo coupled with variable donating moieties for three‐terminal organic synaptic transistors (TOSTs) are reported. It is found that the synaptic function and device stability of TOSTs are significantly improved by enhancing the electron‐donating strength of donor units. Polymer alkylated isoindigo‐bis‐ethylenedioxythiophene exhibits high analog switching range of 170 ×, two orders of magnitude higher than that of normal organic neuromorphic devices. They also demonstrate excellent memory retention of over 5 × 103 s, low switching energy of 13 fJ, and ultrahigh operational stability with 99% of its original current after 100 000 write‐read events in air. Furthermore, the high viability of strong donor strategy is showcased by demonstrating flexible TOSTs with stable synaptic function after repeated mechanical bending as well as organic synapses capable of simulating image information processing. Overall, this work highlights the advantages of the strong donor functionalization strategy to boost the synaptic performance and device stability of TOSTs.

10 citations