Jijun Feng

TL;DR: In this paper, the p-CuO/n-SnO2 core-shell nanowires with precisely controlled shell thickness were synthesized through a sequential process combining a solution processing and atomic layer deposition.

TL;DR: In this paper, the Zn-doped Ga2O3 (ZGO) films were fabricated by a combination of PE-ALD of ZnO3 and TH-ALD with trimethylgallium and O2 plasma as a reactant for the plasmaenhanced atomic layer deposition (PE-ALD), respectively.

TL;DR: In this article, thin Ga2O3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasmaenhanced atomic layer deposition.

TL;DR: More research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of Si Ox/SiO2 super-lattices.

TL;DR: In this paper, a 3D polarizing beam splitter based on a silicon nitride (Si3N4) vertical directional coupler is experimentally demonstrated, where a new planarization technique by incorporating conventional chemical-mechanical lapping with a dry-etching process is developed, in order to obtain a flat film surface for the second Si3N 4 core deposition after the first-layer waveguide is formed.