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Jin Seog Gwag

Researcher at Yeungnam University

Publications -  167
Citations -  1675

Jin Seog Gwag is an academic researcher from Yeungnam University. The author has contributed to research in topics: Liquid crystal & Liquid-crystal display. The author has an hindex of 20, co-authored 143 publications receiving 1375 citations. Previous affiliations of Jin Seog Gwag include Pusan National University & Hanyang University.

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In-plane bistable nematic liquid crystal devices based on nanoimprinted surface relief

TL;DR: A bistable nematic device using a fourfold symmetrical bidirectional nanometer-scale surface grating fabricated by the nano-printing lithography was presented in this article.
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Surface-controlled patterned vertical alignment mode with reactive mesogen.

TL;DR: A patterned vertical alignment (PVA) mode controlled by a modified surface with ultraviolet (UV) curable reactive mesogen mixed with vertical alignment material for a liquid crystal display (LCD) with fast response time is proposed.
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A Multimode-Type Transflective Liquid Crystal Display Using the Hybrid-Aligned Nematic and Parallel-Rubbed Vertically Aligned Modes

TL;DR: In this article, a transflective liquid crystal display (LCD) of the multimode type, which is composed of the hybrid-aligned nematic (HAN) mode in the reflective region and the parallel rubbed vertically aligned (PRVA)mode in the transmissive region, was proposed.
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Polarized Light-Emitting Diodes Based on Patterned MoS2 Nanosheet Hole Transport Layer

TL;DR: This work demonstrates a highly efficient polarized OLED with a polarization ratio of 62.5:1 in the emission spectrum (166.7:1 at the peak intensity of 540 nm), which meets the manufacturing requirement.
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Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

TL;DR: In this article, the influence of Cu atomic concentration on structural, electrical and optical properties of ZnO thin films was discussed in detail, which showed an average optical transmittance about 80% in the visible region and decreased optical band gap values from 3.2 to 3.01 eV with increasing of Cu doping content.