Jin Xu

TL;DR: In this article, the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation was investigated and a de-pinning of domains due to reduction of the defect concentration at bottom electrode interface was suggested as the origin of the wake-up.

TL;DR: In this article, the influence of thickness on thin film properties was investigated and it was shown that film grain sizes and density monotonically increased with increasing film thickness, and preferred orientation also varied as a function of thickness.

TL;DR: In this article, a detailed experimental investigation of energy storage properties is presented for 10'nm thick silicon-doped hafnium oxide anti-ferroelectric thin films, and an extremely large intrinsic energy storage density (ESD) of 61.2'J/cm3 is achieved at 4.5'MV/cm with a high efficiency of ∼65%.

TL;DR: In this article, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films.

TL;DR: In this article, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage.