Jinluo Cheng

Bio: Jinluo Cheng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Spin polarization & Graphene. The author has an hindex of 21, co-authored 49 publications receiving 1671 citations. Previous affiliations of Jinluo Cheng include VU University Amsterdam & University of Science and Technology of China.

Third order optical nonlinearity of graphene

Abstract: We perform a perturbative calculation of the third order optical conductivities of doped graphene, using approximations valid around the Dirac points and neglecting effects due to scattering and electron–electron interactions. In this limit analytic formulas can be constructed for the conductivities. We discuss in detail the results for third harmonic generation, the Kerr effect and two-photon carrier injection, parametric frequency conversion, and two-color coherent current injection. We find a complicated dependence on the chemical potential and photon energies. The linear dispersion causes resonances over a wide range of photon energies, and it is possible to obtain large optical nonlinearities by tuning the chemical potential.

Gate-tunable third-order nonlinear optical response of massless Dirac fermions in graphene

Abstract: Graphene with massless Dirac fermions can have exceptionally strong third-order optical nonlinearities. Yet reported values of nonlinear optical susceptibilities for third-harmonic generation (THG), four-wave mixing (FWM) and self-phase modulation vary over six orders of magnitude. Such variation likely arises from frequency-dependent resonance effects of different processes in graphene under different doping. Here, we report an experimental study of THG and FWM in graphene using gate tuning to adjust the doping level and vary the resonant condition. We find that THG and sum-frequency FWM are strongly enhanced in heavily doped graphene, while the difference-frequency FWM appears just the opposite. Difference-frequency FWM exhibited a novel divergence towards the degenerate case in undoped graphene, leading to a giant enhancement of the nonlinearity. The results are well supported by theory. Our full understanding of the diverse nonlinearity of graphene paves the way towards future design of graphene-based nonlinear optoelectronic devices. Third-harmonic generation and four-wave mixing of light can be enhanced in graphene with gate tuning to adjust the doping level. The findings may lead to new graphene-based nonlinear optoelectronic devices.

Third-order nonlinearity of graphene: Effects of phenomenological relaxation and finite temperature

Abstract: We investigate the effect of phenomenological relaxation parameters on the third-order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation around the Dirac points. An analytic expression for the nonlinear conductivity at zero temperature is obtained under the linear dispersion approximation. With this analytic formula as a starting point, we construct the conductivity at finite temperature and study the optical response to a laser pulse of finite duration. We illustrate the dependence of several nonlinear optical effects, such as third harmonic generation, Kerr effects and two photon absorption, parametric frequency conversion, and two-color coherent current injection, on the relaxation parameters, temperature, and pulse duration. In the special case where one of the electric fields is taken as a dc field, we investigate the dc-current- and dc-field-induced second-order nonlinearities, including dc-current-induced second harmonic generation and difference frequency generation.

Theory of the Spin Relaxation of Conduction Electrons in Silicon

Abstract: A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T-3 temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.

Negative Kerr Nonlinearity of Graphene as seen via Chirped-Pulse-Pumped Self-Phase Modulation

Abstract: The optical Kerr effect is the variation of a material's refractive index in response to high-intensity light, and as such causes the spectrum of the light to change. The authors measure the spectral broadening of chirped laser pulses in graphene-covered silicon waveguides, and determine the sign of graphene's Kerr index to be $n\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}g\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}v\phantom{\rule{0}{0ex}}e$, contrary to common assumption. This finding suggests greatly extended applicability of graphene in nonlinear photonic devices.

Spins in few-electron quantum dots

Abstract: The canonical example of a quantum-mechanical two-level system is spin. The simplest picture of spin is a magnetic moment pointing up or down. The full quantum properties of spin become apparent in phenomena such as superpositions of spin states, entanglement among spins, and quantum measurements. Many of these phenomena have been observed in experiments performed on ensembles of particles with spin. Only in recent years have systems been realized in which individual electrons can be trapped and their quantum properties can be studied, thus avoiding unnecessary ensemble averaging. This review describes experiments performed with quantum dots, which are nanometer-scale boxes defined in a semiconductor host material. Quantum dots can hold a precise but tunable number of electron spins starting with 0, 1, 2, etc. Electrical contacts can be made for charge transport measurements and electrostatic gates can be used for controlling the dot potential. This system provides virtually full control over individual electrons. This new, enabling technology is stimulating research on individual spins. This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist’s viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for 1 the rotation of an electron spin into a superposition of up and down, 2 the measurement of the quantum state of an individual spin, and 3 the control of the interaction between two neighboring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins i.e., single spintronics.

Broadband Nonlinear Photonics in Few-Layer MXene Ti3C2Tx (T = F, O, or OH)

Abstract: Studies of the nonlinear optical phenomena that describe the light-matter interactions in 2D crystalline materials have promoted a diverse range of photonic applications. MXene, as a recently developed new 2D material, has attracted considerable attention because of its graphene-like but highly tunable and tailorable electronic/optical properties. In this study, we systematically characterize the nonlinear optical response of MXene Ti3C2Tx nanosheets over the spectral range of 800 nm to 1800 nm. A large effective nonlinear absorption coefficient (βeff∼-10−21 m2/V2) due to saturable absorption is observed for all of the testing wavelengths. The contribution of saturable absorption is two orders of magnitude higher than other lossy nonlinear absorption processes, and the amplitude of βeff strongly depends on the light bleaching level. A negative nonlinear refractive index (n2∼-10−20 m2/W) with value comparable to that of the intensively studied graphene was demonstrated for the first time. These results demonstrate the efficient broadband light signal manipulating capabilities of Ti3C2Tx, which is only one member of the large MXene family. The capability of an efficient broadband optical switch is strongly confirmed using Ti3C2Tx as saturable absorbers for mode-locking operation at 1066 nm and 1555 nm, respectively. A highly stable femtosecond laser with pulse duration as short as 159 fs in the telecommunication window is readily obtained. Considering the diversity of the MXene family, this study may open a new avenue to advanced photonic devices.

Electrical creation of spin polarization in silicon at room temperature

Abstract: The control and manipulation of the electron spin in semiconductors is central to spintronics1,2, which aims to represent digital information using spin orientation rather than electron charge. Such spin-based technologies may have a profound impact on nanoelectronics, data storage, and logic and computer architectures. Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (gallium arsenide and silicon) using all-electrical structures3–9, but so far only at temperatures below 150K and in n-type materials, which limits further development. Here we demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect and the electrical detection of the induced spin accumulation. A spin splitting as large as 2.9meV is created in n-type silicon, corresponding to an electron spin polarization of 4.6%. The extracted spin lifetime is greater than 140 ps for conduction electrons in heavily doped n-type silicon at 300K and greater than 270 ps for holes in heavily doped p-type silicon at the same temperature. The spin diffusion length is greater than 230nmfor electrons and 310nm for holes in the corresponding materials. These results open the way to the implementation of spin functionality in complementary silicon devices and electronic circuits operating at ambient temperature, and to the exploration of their prospects and the fundamental rules that govern their behaviour.

Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

Abstract: The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on sub-picosecond time scales and that interband recombination times are carrier density dependent.

Nonlinear Optics with 2D Layered Materials.

Abstract: 2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.