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Jitendra Pal

Bio: Jitendra Pal is an academic researcher from WiSpry. The author has contributed to research in topics: Low voltage & Reliability (semiconductor). The author has an hindex of 1, co-authored 2 publications receiving 1 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch is proposed based on a combination of electrothermal actuation and electrostatic latching hold.
Abstract: In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

6 citations


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Proceedings ArticleDOI
19 Jun 2022
TL;DR: In this paper , a chevron actuator employing stacked composite SOI/SiO layers is proposed to reduce the potential of crosstalk between the switch and DC heater actuator.
Abstract: This work presents the design and fabrication of a chevron (V-shaped) type electro-thermally actuated micro-electromechanical systems (MEMS) actuator aimed for a DC switch structure using the PiezoMUMPs technology. The chevron actuator employs stacked composite SOI/SiO 2 /Al–Cr layers. The potential of crosstalk between the switch and DC heater actuator is mitigated. An oxide (SiO 2 ) layer acts as an interface between the thin film aluminum (Al) heater and a silicon (Si) structural layer that forms the MEMS switch for power switching applications. Preliminary results show that the out-of-plane motion of the proposed design is reduced by more than 10× in comparison to a reference design. The average power consumption during actuation was measured to be ~ 80 mW, with a switching speed of < 35 ms. The switch can sustain up to 350 V at its terminals, enabling it for use in high voltage harsh environments.

1 citations

Journal ArticleDOI
TL;DR: In this article , the authors provide an overview of different optimization techniques, including Finite Difference Time Domain (FDTD), Finite Element Method (FEM), Method of moments (MoM), Taguchi method, Response Surface Method (RSM), Artificial Neural Network (ANN) model and Evolutionary Algorithm (EA) based model with the ANN and EA model being the most efficient due to its capability to handle complex designs and provide accurate predictions.