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Joan Ramon Morante

Bio: Joan Ramon Morante is an academic researcher from Adria Airways. The author has contributed to research in topics: Raman spectroscopy & Nanowire. The author has an hindex of 84, co-authored 791 publications receiving 25917 citations. Previous affiliations of Joan Ramon Morante include Spanish National Research Council & University of Valladolid.


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TL;DR: In this article, the authors present a complete Raman spectrum analysis of SnO2 nanoparticles, which comprises modification of the normal vibration modes active in Raman when the spectra are obtained from nanocrystals of Sn O 2 nanoparticles in the region around 475 −775 cm 21, and the appearance of the acoustic modes in the low-frequency region of the spectrum.
Abstract: 14 and space group P4 2 /mnm. The unit cell consists of two metal atoms and four oxygen atoms. Each metal atom is situated amidst six oxygen atoms which approximately form the corners of a regular octahedron. Oxygen atoms are surrounded by three tin atoms which approximate the corners of an equilateral triangle. The lattice parameters are a5b 54.737 A, and c53.186 A. The ionic radii for O 22 and Sn 41 are 1.40 and 0.71 A, respectively. 1 The 6 unit cell atoms give a total of 18 branches for the vibrational modes in the first Brillouin zone. The mechanical representation of the normal vibration modes at the center of the Brillouin zone is given by 2,3 G5G 1 ~ A1g!1G 2 ~ A2g!1G 3 ~ B1g!1G 4 ~ B2g! 1G 5 ~ Eg!12G 1 ~ A2u!12G 4 ~ B1u!14G 5 ~ Eu!, ~1! using the Koster notation with the commonly used symmetry designations listed in parenthesis. The latter will be used throughout this article. Of these 18 modes, 2 are active in infrared ~the single A2u and the triply degenerate Eu), 4 are Raman active ~three nondegenerated modes, A1g , B1g , B2g , and a doubly degenerate Eg), and two are silent ( A2g , and B1u). One A2u and two Eu modes are acoustic. In the Raman active modes oxygen atoms vibrate while Sn atoms are at rest ~see Fig. 1 in Ref. 4!. The nondegenerate mode, A1g , B1g , and B2g , vibrate in the plane perpendicular to the c axis while the doubly degenerated E g mode vibrates in the direction of the c axis. The B 1g mode consists of rotation of the oxygen atoms around the c axis, with all six oxygen atoms of the octahedra participating in the vibration. In the A2g infrared active mode, Sn and oxygen atoms vibrate in the c axis direction, and in the Eu mode both Sn and O atoms vibrate in the plane perpendicular to the c axis. The silent modes correspond to vibrations of the Sn and O atoms in the direction of the c axis (B1u) or in the plane perpendicular to this direction ( A2g). According to the literature, the corresponding calculated or observed frequencies of the optical modes are presented in Table I. When the size of the SnO2 crystal is reduced, the infrared spectrum is modified because the interaction between electromagnetic radiation and the particles depends on the crystal’s size, shape, and state of aggregation. 8‐1 0 Experiments using Raman spectroscopy have also reported spectrum modification, at least partially. Low frequency bands have been observed previously in SnO2, 11 and several authors have reported the existence of bands not observed in single-crystal or polycrystalline SnO 2 which have been found to be closely related to grain size. 12‐15 However, some of these reports do not adequately explain the origin of the abnormal spectrum. The aim of this article is to present a complete Raman spectrum of SnO2 nanoparticles. The analysis comprises ~i! modification of the normal vibration modes active in Raman when the spectra are obtained from nanocrystals of SnO2 ~‘‘classical modes’’ !, ~ii! the disorder activated surface modes in the region around 475‐775 cm 21 , and ~iii! the appearance of the acoustic modes in the low-frequency region of the spectra.

669 citations

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TL;DR: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented in this paper.
Abstract: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

457 citations

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TL;DR: In this paper, the authors summarized the fundamental developments and characterization of organic redox flow batteries from both the chemistry and materials perspectives and discussed the latest advances, future challenges and opportunities for further development.

375 citations

Journal ArticleDOI
TL;DR: This work presents a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires and shows that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers.
Abstract: Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-innanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells.

336 citations

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TL;DR: In this article, the influence of Nb doping on the TiO2 anatase-to-rutile phase transition was studied using combined transmission electron microscopy, Raman spectroscopy, x-ray diffraction and selected area electron diffraction analysis.
Abstract: We study the influence of Nb doping on the TiO2 anatase-to-rutile phase transition, using combined transmission electron microscopy, Raman spectroscopy, x-ray diffraction and selected area electron diffraction analysis. This approach enabled anatase-to-rutile phase transition hindering to be clearly observed for low Nb-doped TiO2 samples. Moreover, there was clear grain growth inhibition in the samples containing Nb. The use of high resolution transmission electron microscopy with our samples provides an innovative perspective compared with previous research on this issue. Our analysis shows that niobium is segregated from the anatase structure before and during the phase transformation, leading to the formation of NbO nanoclusters on the surface of the TiO2 rutile nanoparticles.

310 citations


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TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

6,349 citations

Journal ArticleDOI
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

3,720 citations