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Johan Hendrik Klootwijk

Researcher at Philips

Publications -  116
Citations -  2068

Johan Hendrik Klootwijk is an academic researcher from Philips. The author has contributed to research in topics: Layer (electronics) & Capacitor. The author has an hindex of 22, co-authored 115 publications receiving 1931 citations. Previous affiliations of Johan Hendrik Klootwijk include TSMC.

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Journal ArticleDOI

Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

TL;DR: In this article, the authors compared the performance of remote plasma ALD with thermal ALD in the Oxford Instruments FlexAL this article and compared the results from both the two processes.
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Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

TL;DR: In this paper, an atomic-layer deposition (ALD) was used to achieve an ultra-high capacitance density of 440 at a breakdown voltage VDB > 6 V on a silicon substrate containing high-aspect-ratio macropore arrays.
Journal ArticleDOI

Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor

TL;DR: In this article, the authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL™) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200mm in diameter.
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On the electrochemistry of an anode stack for all-solid-state 3D-integrated batteries

TL;DR: In this paper, the authors report on the electrochemical and material characterization of a potential planar anode stack for all-solid-state 3D-integrated batteries, where a Li diffusion barrier layer material is used to effectively shield the substrate from the battery stack.
Proceedings ArticleDOI

Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs

TL;DR: In this paper, the authors discuss the merits and limitations of CTLM (Circular Transfer Length Method) contact resistance assessment test structures for III-V based heterojunction bipolar transistors.