Johann Peter Reithmaier

Bio: Johann Peter Reithmaier is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 41, co-authored 436 publications receiving 9694 citations. Previous affiliations of Johann Peter Reithmaier include University of Würzburg & Siemens.

Strong coupling in a single quantum dot–semiconductor microcavity system

Abstract: Cavity quantum electrodynamics, a central research field in optics and solid-state physics, addresses properties of atom-like emitters in cavities and can be divided into a weak and a strong coupling regime. For weak coupling, the spontaneous emission can be enhanced or reduced compared with its vacuum level by tuning discrete cavity modes in and out of resonance with the emitter. However, the most striking change of emission properties occurs when the conditions for strong coupling are fulfilled. In this case there is a change from the usual irreversible spontaneous emission to a reversible exchange of energy between the emitter and the cavity mode. This coherent coupling may provide a basis for future applications in quantum information processing or schemes for coherent control. Until now, strong coupling of individual two-level systems has been observed only for atoms in large cavities. Here we report the observation of strong coupling of a single two-level solid-state system with a photon, as realized by a single quantum dot in a semiconductor microcavity. The strong coupling is manifest in photoluminescence data that display anti-crossings between the quantum dot exciton and cavity-mode dispersion relations, characterized by a vacuum Rabi splitting of about 140 microeV.

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

Abstract: The fine structure of excitons is studied by magnetophotoluminescence spectroscopy of single self-assembled In(Ga)As/(Al)GaAs quantum dots. Both strength and orientation of the magnetic field are varied. In a combination with a detailed theoretical analysis, these studies allow us to develop a comprehensive picture of the exciton fine structure. Symmetry of the dot structures as well as its breaking cause characteristic features in the optical spectra, which are determined by the electron-hole exchange and the Zeeman interaction of the carriers. The symmetry breaking is either inherent to the dot due to geometry asymmetries, or it can be obtained by applying a magnetic field with an orientation different from the dot symmetry axis. From data on spin splitting and on polarization of the emission we can identify neutral as well as charged exciton complexes. For dots with weakly broken symmetry, the angular momentum of the neutral exciton is no longer a good quantum number and the exchange interaction lifts degeneracies within the fine-structure manifold. The symmetry can be restored by a magnetic field due to the comparatively strong Zeeman interactions of electron and hole. For dots with a strongly broken symmetry, bright and dark excitons undergo a strong hybridization, as evidenced by pronounced anticrossings when states within the manifold are brought into resonance. The fine structure can no longer be described within the frame developed for structures of higher dimensionality. In particular, the hybridization cannot be broken magnetically. For charged excitons, the exchange interaction vanishes, demonstrating that the exchange splitting of a neutral exciton can be switched off by injecting an additional carrier.

Optical Modes in Photonic Molecules

Abstract: Photonic molecules have been fabricated by coupling pairs of micrometer-sized semiconductor cavities via a narrow channel. The optical modes in these structures have been studied spectroscopically as a function of the coupling and the mode energies are compared to detailed calculations. These results provide a rich picture of photonic modes in these molecules.

Strong coupling in a single quantum dot semiconductor microcavity system

Abstract: Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cQED). We report on cavity quantum electrodynamics (cQED) experiments in a single quantum dot semiconductor system. CQED, which is a very active research field in optics and solid state physics, can be divided into a weak and a strong coupling regime. In case of weak coupling, the spontaneous emission rate of an atom-like emitter, e.g. a single quantum dot exciton, can be enhanced or reduced compared to the value in vacuum in an irreversible emission process. In contrast, a reversible energy exchange between the emitter and the cavity mode takes place when the conditions for strong coupling are fulfilled. We investigate weak as well as strong coupling in a system based on a low density In0.3Ga 0.7As quantum dot layer placed as the active layer in a high quality planar AlAs/GaAs distributed Bragg reflector cavity grown by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (up to 43.000 for 4 μm diameter) were realized from the planar cavity structure. Due to the high oscillator strength of the In0.3Ga 0.7As quantum dots together with a small mode volume in high finesse micropillar cavities it is possible to observe strong coupling characterized by a vacuum Rabi splitting of 140 μeV. The fabrication of high-Q micropillar cavities as well as conditions necessary to realize strong coupling in the present system are discussed in detail.

Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In 0.60 Ga 0.40 As Quantum Dots

Abstract: Self-assembled ${\mathrm{In}}_{0.60}{\mathrm{Ga}}_{0.40}\mathrm{As}$ quantum dots (QD's) have been studied by single dot magnetophotoluminescence spectroscopy ( $B\ensuremath{\le}8\mathrm{T}$). At $B\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0$ a splitting of the exciton ( $X$) emission is observed which we ascribe to an asymmetry of the confinement potential. With increasing $B$ the emission splits into a quadruplet corresponding to the $m\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}\ifmmode\pm\else\textpm\fi{}2$ and $\ifmmode\pm\else\textpm\fi{}1X$ states, which originates from a reduction of the cubic symmetry of the QD's. From the spectroscopic data we obtain values for the electron ( $e$) and hole ( $h$) $g$ factors. We also determine the $X$ singlet-triplet splitting which is found to be enhanced over bulk values by about an order of magnitude due to the increase of the $e\ensuremath{-}h$ overlap in the QD's.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Optical microcavities

Abstract: Microcavity physics and design will be reviewed. Following an overview of applications in quantum optics, communications and biosensing, recent advances in ultra-high-Q research will be presented.

Photonic crystals

Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Abstract: The electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties are reviewed. Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.