J
Johann W. Kolar
Researcher at ETH Zurich
Publications - 1009
Citations - 44219
Johann W. Kolar is an academic researcher from ETH Zurich. The author has contributed to research in topics: Rectifier & Three-phase. The author has an hindex of 97, co-authored 965 publications receiving 36902 citations. Previous affiliations of Johann W. Kolar include Alstom & Infineon Technologies.
Papers
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Proceedings ArticleDOI
Active Gate Control for Current Balancing in Paralleled IGBT Modules in a Solid State Modulator
TL;DR: In the paper an active gate control for paralleled IGBTs in a solid state modulator is presented, the focus is put on the rising and falling edges and the overshoot which are very important for klystron applications.
Proceedings ArticleDOI
Synergetic Control of a 3-Φ Buck-Boost Current DC-Link EV Charger Considering Wide Output Range and Irregular Mains Conditions
TL;DR: In this paper, a wide output voltage range EV charger employing a three-phase buck-type current source rectifier (CSR)-stage and a series-connected boost-type DC/DC-stage is introduced, enabling robust operation even under heavily unbalanced 3-Φ mains conditions.
Journal ArticleDOI
Electrical and Thermal Characterization of an Inductor-Based ANPC-Type Buck Converter in 14 nm CMOS Technology for Microprocessor Applications
Pedro A. M. Bezerra,Florian Krismer,Johann W. Kolar,Riduan K. Aljameh,Stephan Paredes,Ralph Heller,Thomas Brunschwiler,Pier Andrea Francese,T. Morf,Marcel Kossel,Matthias Braendli +10 more
TL;DR: In this article, the authors present a comprehensive characterization of a PCB-and inductor-based four-phase ANPC-type IVR that uses a Power Management IC (PMIC) implemented in a $14\,{\rm nm} technology node.
Journal ArticleDOI
Noise Minimization for Ultra-High SNR Class-D Power Amplifiers
Mario Mauerer,Johann W. Kolar +1 more
TL;DR: In this article, the influence of the open-loop gains of the cascaded feedback control system on the load current signal-to-noise ratio (SNR) was investigated with a 400 V hardware demonstrator utilizing gallium nitride (GaN) power transistors.
Proceedings ArticleDOI
A 180MW, 450kV solid state modulator based on Press Pack IGBT technology
TL;DR: In this paper, the reliability of a solid state power modulator for free electron laser applications is studied, where the internal parasitic components and couplings causing the asymmetries are extracted by means of the Partial Element Equivalent Circuit method.