J
Johann W. Kolar
Researcher at ETH Zurich
Publications - 1009
Citations - 44219
Johann W. Kolar is an academic researcher from ETH Zurich. The author has contributed to research in topics: Rectifier & Three-phase. The author has an hindex of 97, co-authored 965 publications receiving 36902 citations. Previous affiliations of Johann W. Kolar include Alstom & Infineon Technologies.
Papers
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Proceedings ArticleDOI
High temperature (≫200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET
TL;DR: In this article, different gate drive topologies for SiC JFETs with respect to high temperature operation capability, limitations, dynamic performance and circuit complexity are discussed, and an experimental performance comparison of edge-triggered and phase-difference HT drivers with a conventional room temperature jFET gate driver is given.
Journal ArticleDOI
Accurate Calorimetric Switching Loss Measurement for 900 V 10 m $\Omega$ SiC mosfets
TL;DR: In this paper, the authors present and evaluate three accurate (€ 20 ) calorimetric switching loss measurement methods, which are capable of measuring hard and soft switching losses at high speed (20-25 min/point) compared to other caloreimetric methods.
Proceedings ArticleDOI
Weight optimization of a cooling system composed of fan and extruded fin heat sink
TL;DR: In this paper, the authors proposed a weight optimization of forced convection cooling systems, composed of fan and extruded fin heat sink, required for a dc-dc converter of an airborne wind turbine (AWT) system.
Proceedings ArticleDOI
Optimal Inductor Design for 3-Phase Voltage-Source PWM Converters Considering Different Magnetic Materials and a Wide Switching Frequency Range
TL;DR: In this paper, an optimization regarding volume, efficiency and costs of AC boost inductors in 3-phase PWM converters based on detailed multi-domain models is presented for a wide switching frequency range of 5-80 kHz and a wide current ripple range of 1-100 %, considering ferrite, amorphous and powder core materials in combination with round, litz, foil and flat wire windings.
Journal ArticleDOI
SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
TL;DR: In this paper, the impact of wide band gap materials on the system level performance and power density of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems.