John B Ketterson

Bio: John B Ketterson is an academic researcher from Northwestern University. The author has contributed to research in topics: Thin film & Magnetization. The author has an hindex of 60, co-authored 814 publications receiving 16929 citations. Previous affiliations of John B Ketterson include University of Virginia & University of California, Los Angeles.

Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties

Abstract: The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compound, we have prepared methylammonium, CH3NH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, (CH3)3NHGeI3 (6), and isopropylammonium, (CH3)2C(H)NH3GeI3 (7) analogues. The crystal structures of the compounds are classified based on their dimensionality with 1–4 forming 3D perovskite frameworks and 5–7 1D infinite chains. Compounds 1–7, with the exception of compounds 5 (centrosymmetric) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compounds have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). Herein, we report on the second...

Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Abstract: We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.

Room-temperature ferromagnetism in Cu-doped ZnO thin films

Abstract: A series of copper-doped zinc oxide films were grown by pulsed-laser ablation. Films grown under conditions that produced n-type ZnO were nonmagnetic while those grown under conditions that produced p-type were ferromagnetic with a Curie temperature above 350 K. The magnetic moment per copper atom decreased as the copper concentration increased. An explanation for this result is proposed based on the distance between nearest-neighbor copper atoms.

Ferromagnetism in Mn-doped Ge

Abstract: We have successfully fabricated highly (up to 6%) Mn-doped bulk Ge single crystals. The lattice constant increases linearly with Mn concentration due to the larger Mn atomic radius compared with Ge, strongly indicating that Mn ions are being incorporated into the host Ge lattice. Alloys with lower Mn concentrations showed paramagnetism due to localized magnetic ions. ${\mathrm{Ge}}_{0.94}{\mathrm{Mn}}_{0.06}$ showed ferromagnetic ordering at \ensuremath{\sim}285 K, as determined from temperature-dependent magnetization and resistance measurements. The coersive field was 1260 Oe at 250 K.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Graphene: The New Two-Dimensional Nanomaterial

Abstract: Every few years, a new material with unique properties emerges and fascinates the scientific community, typical recent examples being high-temperature superconductors and carbon nanotubes. Graphene is the latest sensation with unusual properties, such as half-integer quantum Hall effect and ballistic electron transport. This two-dimensional material which is the parent of all graphitic carbon forms is strictly expected to comprise a single layer, but there is considerable interest in investigating two-layer and few-layer graphenes as well. Synthesis and characterization of graphenes pose challenges, but there has been considerable progress in the last year or so. Herein, we present the status of graphene research which includes aspects related to synthesis, characterization, structure, and properties.

Topological insulators with inversion symmetry

Abstract: Topological insulators are materials with a bulk excitation gap generated by the spin-orbit interaction that are different from conventional insulators. This distinction is characterized by ${Z}_{2}$ topological invariants, which characterize the ground state. In two dimensions, there is a single ${Z}_{2}$ invariant that distinguishes the ordinary insulator from the quantum spin-Hall phase. In three dimensions, there are four ${Z}_{2}$ invariants that distinguish the ordinary insulator from ``weak'' and ``strong'' topological insulators. These phases are characterized by the presence of gapless surface (or edge) states. In the two-dimensional quantum spin-Hall phase and the three-dimensional strong topological insulator, these states are robust and are insensitive to weak disorder and interactions. In this paper, we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the ${Z}_{2}$ invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wave functions at the time-reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials that are strong topological insulators, including the semiconducting alloy ${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$ as well as $\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{Sn}$ and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments.

Self-assembly and mineralization of peptide-amphiphile nanofibers

Abstract: We have used the pH-induced self-assembly of a peptide-amphiphile to make a nanostructured fibrous scaffold reminiscent of extracellular matrix. The design of this peptide-amphiphile allows the nanofibers to be reversibly cross-linked to enhance or decrease their structural integrity. After cross-linking, the fibers are able to direct mineralization of hydroxyapatite to form a composite material in which the crystallographic c axes of hydroxyapatite are aligned with the long axes of the fibers. This alignment is the same as that observed between collagen fibrils and hydroxyapatite crystals in bone.