John F. Nye

Bio: John F. Nye is an academic researcher from George Mason University. The author has contributed to research in topics: Diffraction & Glacier. The author has an hindex of 51, co-authored 215 publications receiving 21419 citations. Previous affiliations of John F. Nye include National Research University – Higher School of Economics & University of Washington.

Physical properties of crystals

Abstract: First published in 1957, this classic study has been reissued in a paperback version that includes an additional chapter bringing the material up to date. The author formulates the physical properties of crystals systematically in tensor notation, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them. The mathematical groundwork is laid in a discussion of tensors of the first and second ranks. Tensors of higher ranks and matrix methods are then introduced as natural developments of the theory. A similar pattern is followed in discussing thermodynamic and optical aspects.

Dislocations in wave trains

Abstract: When an ultrasonic pulse, containing, say, ten quasi-sinusoidal oscillations, is reflected in air from a rough surface, it is observed experimentally that the scattered wave train contains dislocations, which are closely analogous to those found in imperfect crystals. We show theoretically that such dislocations are to be expected whenever limited trains of waves, ultimately derived from the same oscillator, travel in different directions and interfere - for example in a scattering problem. Dispersion is not involved. Equations are given showing the detailed structure of edge, screw and mixed edge-screw dislocations, and also of parallel sets of such dislocations. Edge dislocations can glide relative to the wave train at any velocity; they can also climb, and screw dislocations can glide. Wavefront dislocations may be curved, and they may intersect; they may collide and rebound; they may annihilate each other or be created as loops or pairs. With dislocations in wave trains, unlike crystal dislocations, there is no breakdown of linearity near the centre. Mathematically they are lines along which the phase is indeterminate; this implies that the wave amplitude is zero.

The Mechanics of Glacier Flow

Abstract: The flow of valley glaciers is examined in the light of recent laboratory experiments on the behaviour of ice under load. Simple expressions are given for the velocity distributions in some cases of laminar flow, and the modification of a pure laminar flow theory necessary to explain the formation of transverse crevasses and thrust planes is considered. The paper ends with some remarks about the formation of crevasse patterns on the surfaces of glaciers. The statical equilibrium of a circular ice cap is discussed in an appendix.

Water Flow in Glaciers: Jökulhlaups, Tunnels and Veins

Abstract: The physics of water flow within and under glacier ice is examined with special reference to the periodic catastrophic outbursts of water (jokulhlaups) from the subglacial lake Grimsvotn, Vatnajokull, Iceland. The lake is sealed until it reaches a critical level which enables it to lift the glacier, helped by a hydrostatic cantilever effect. The differential equations for non-steady water flow in a subglacial tunnel are derived and applied to the 1972 Grimsvotn outburst. The discharge: time relation observed during the growth stage, and the abrupt ending of the flood, are both very well accounted for by a theory which is insensitive to the details of the subglacial tunnel system. The steady state, in which an intergranular vein or tunnel is simultaneously melted open by frictional heat and closed by plastic deformation, may be stable or unstable according to the conditions imposed at the ends. This explains why the flow of water in a vein does not normally increase unstably as in a jokulhlaup. An ice-dammed lake does not drain away through the vein system because the driving force on the vein-water is towards the lake rather than away from it.

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

Abstract: We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Quantal phase factors accompanying adiabatic changes

Abstract: A quantal system in an eigenstate, slowly transported round a circuit C by varying parameters R in its Hamiltonian Ĥ(R), will acquire a geometrical phase factor exp{iγ(C)} in addition to the familiar dynamical phase factor. An explicit general formula for γ(C) is derived in terms of the spectrum and eigenstates of Ĥ(R) over a surface spanning C. If C lies near a degeneracy of Ĥ, γ(C) takes a simple form which includes as a special case the sign change of eigenfunctions of real symmetric matrices round a degeneracy. As an illustration γ(C) is calculated for spinning particles in slowly-changing magnetic fields; although the sign reversal of spinors on rotation is a special case, the effect is predicted to occur for bosons as well as fermions, and a method for observing it is proposed. It is shown that the Aharonov-Bohm effect can be interpreted as a geometrical phase factor.

Light Propagation with Phase Discontinuities: Generalized Laws of Reflection and Refraction

Abstract: Conventional optical components rely on gradual phase shifts accumulated during light propagation to shape light beams. New degrees of freedom are attained by introducing abrupt phase changes over the scale of the wavelength. A two-dimensional array of optical resonators with spatially varying phase response and subwavelength separation can imprint such phase discontinuities on propagating light as it traverses the interface between two media. Anomalous reflection and refraction phenomena are observed in this regime in optically thin arrays of metallic antennas on silicon with a linear phase variation along the interface, which are in excellent agreement with generalized laws derived from Fermat’s principle. Phase discontinuities provide great flexibility in the design of light beams, as illustrated by the generation of optical vortices through use of planar designer metallic interfaces.

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.