Intracavity semiconductor saturable absorber mirrors (SESAM's) offer unique and exciting possibilities for passively pulsed solid-state laser systems, extending from Q-switched pulses in the nanosecond and picosecond regime to mode-locked pulses from 10's of picoseconds to sub-10 fs. This paper reviews the design requirements of SESAM's for stable pulse generation in both the mode-locked and Q-switched regime. The combination of device structure and material parameters for SESAM's provide sufficient design freedom to choose key parameters such as recovery time, saturation intensity, and saturation fluence, in a compact structure with low insertion loss. We have been able to demonstrate, for example, passive modelocking (with no Q-switching) using an intracavity saturable absorber in solid-state lasers with long upper state lifetimes (e.g., 1-/spl mu/m neodymium transitions), Kerr lens modelocking assisted with pulsewidths as short as 6.5 fs from a Ti:sapphire laser-the shortest pulses ever produced directly out of a laser without any external pulse compression, and passive Q-switching with pulses as short as 56 ps-the shortest pulses ever produced directly from a Q-switched solid-state laser. Diode-pumping of such lasers is leading to practical, real-world ultrafast sources, and we will review results on diode-pumped Cr:LiSAF, Nd:glass, Yb:YAG, Nd:YAG, Nd:YLF, Nd:LSB, and Nd:YVO/sub 4/.

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Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

Preface Introduction Conventional Coplanar Waveguide Conductor-Backed Coplanar Waveguide Coplanar Waveguide with Finite-Width Ground Planes Coplanar Waveguide Suspended Inside A Conducting Enclosure Coplanar Striplines Microshield Lines and Coupled Coplanar Waveguide Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides Coplanar Waveguide Discontinuities and Circuit Elements Coplanar Waveguide Transitions Directional Couplers, Hybrids, and Magic-Ts Coplanar Waveguide Applications References Index

Coplanar waveguide circuits, components, and systems

Squeezed states of the electromagnetic field have been generated by nondegenerate four-wave mixing due to Na atoms in an optical cavity. The optical noise in the cavity, comprised of primarily vacuum fluctuations and a small component of spontaneous emission from the pumped Na atoms, is amplified in one quadrature of the optical field and deamplified in the other quadrature. These quadrature components are measured with a balanced homodyne detector. The total noise level in the deamplified quadrature drops below the vacuum noise level.

Observation of squeezed states generated by four-wave mixing in an optical cavity

Within the last several years, the field of terahertz science and technology has changed dramatically. Many new advances in the technology for generation, manipulation, and detection of terahertz radiation have revolutionized the field. Much of this interest has been inspired by the promise of valuable new applications for terahertz imaging and sensing. Among a long list of proposed uses, one finds compelling needs such as security screening and quality control, as well as whimsical notions such as counting the almonds in a bar of chocolate. This list has grown in parallel with the development of new technologies and new paradigms for imaging and sensing. Many of these proposed applications exploit the unique capabilities of terahertz radiation to penetrate common packaging materials and provide spectroscopic information about the materials within. Several of the techniques used for terahertz imaging have been borrowed from other, more well established fields such as x-ray computed tomography and synthetic aperture radar. Others have been developed exclusively for the terahertz field, and have no analogies in other portions of the spectrum. This review provides a comprehensive description of the various techniques which have been employed for terahertz image formation, as well as discussing numerous examples which illustrate the many exciting potential uses for these emerging technologies.

https://iopscience.iop.org/article/10.1088/0034-4885/70/8/R02/pdf

Imaging with terahertz radiation

Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time‐resolved‐reflectance techniques, a sub‐picosecond (<0.4 ps) carrier lifetime has been measured for GaAs grown by MBE at ∼200°C and annealed at 600 °C. With the same material as a photoconductive switch we have measured electrical pulses with a full‐width at half‐maximum of 0.6 ps using the technique of electro‐optic sampling. Good responsivity for a photoconductive switch is observed, corresponding to a mobility of the photoexcited carriers of ∼120–150 cm2/V s. GaAs grown by MBE at 200 °C and annealed at 600 °C is also semi‐insulating, which results in a low dark current in the switch application. The combination of fast recombination lifetime, high carrier mobility, and high resistivity makes this material ideal for a number of subpicosecond photoconductive applications.

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Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures

Ultrashort carrier lifetimes were experimentally observed in a variety of As-based III-V crystalline semiconductor layers grown by molecular beam epitaxy over a range of very low substrate temperatures. Time-resolved optical absorption, reflection, and photoconductive switching measurements with femtosecond resolution have been used to directly measure the ultrafast carrier dynamics in these materials. GaAs and In/sub 0.52/Al/sub 0.48/As grown at temperatures of 200 and 150 degrees C, respectively, exhibited subpicosecond carrier lifetimes, while lattice-mismatched In/sub x/Ga/sub 1-x/As on GaAs displayed a 7-ps carrier lifetime in material grown at 200 degrees C. A distinct decrease in carrier lifetime with decreasing growth temperature is documented for all three material systems. For epilayers annealed at high-temperature, resistivities are high, and thus these materials were found to be ideally suited for a number of ultrafast optoelectronic applications. A number of applications are reviewed and discussed. >

Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures

Femtosecond laser pulses generate in Sb coherent ${E}_{g}$ phonons at $\ensuremath{\approx}3.4\mathrm{THz}$, in addition to oscillations of ${A}_{1g}$ symmetry accounted for by the phenomenological displacive-excitation model. Experiments agree with theoretical calculations showing that the coherent driving force in absorbing materials like Sb is determined by Raman processes, as in transparent media. The Raman formalism provides a unifying approach for describing light-induced motion of atoms of both impulsive and displacive character.

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Coherent THz Phonons Driven by Light Pulses and the Sb Problem: What is the Mechanism?

Terahertz imaging for non-destructive evaluation of mural paintings

Femtosecond laser pulses and coherent two-phonon Raman scattering were used to excite KTaO3 into a squeezed state, nearly periodic in time, in which the variance of the atomic displacements dips below the standard quantum limit for half of a cycle. This nonclassical state involves a continuum of transverse acoustic modes that leads to oscillations in the refractive index associated with the frequency of a van Hove singularity in the phonon density of states.

https://science.sciencemag.org/content/sci/275/5306/1638.full.pdf

John F. Whitaker

Papers

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures

Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures

Coherent THz Phonons Driven by Light Pulses and the Sb Problem: What is the Mechanism?

Terahertz imaging for non-destructive evaluation of mural paintings

Vacuum Squeezing of Solids: Macroscopic Quantum States Driven by Light Pulses