Author
John Robertson
Other affiliations: Tulane University, University of Leicester, Central Electricity Generating Board ...read more
Bio: John Robertson is an academic researcher from University of Cambridge. The author has contributed to research in topics: Carbon nanotube & Amorphous carbon. The author has an hindex of 123, co-authored 890 publications receiving 81089 citations. Previous affiliations of John Robertson include Tulane University & University of Leicester.
Topics: Carbon nanotube, Amorphous carbon, Band gap, Carbon, Amorphous solid
Papers published on a yearly basis
Papers
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TL;DR: In this paper, a model and theoretical understanding of the Raman spectra in disordered and amorphous carbon is given, and the nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of the long range bonding.
Abstract: The model and theoretical understanding of the Raman spectra in disordered and amorphous carbon are given. The nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of \ensuremath{\pi} bonding. Visible Raman data on disordered, amorphous, and diamondlike carbon are classified in a three-stage model to show the factors that control the position, intensity, and widths of the G and D peaks. It is shown that the visible Raman spectra depend formally on the configuration of the ${\mathrm{sp}}^{2}$ sites in ${\mathrm{sp}}^{2}$-bonded clusters. In cases where the ${\mathrm{sp}}^{2}$ clustering is controlled by the ${\mathrm{sp}}^{3}$ fraction, such as in as-deposited tetrahedral amorphous carbon (ta-C) or hydrogenated amorphous carbon (a-C:H) films, the visible Raman parameters can be used to derive the ${\mathrm{sp}}^{3}$ fraction.
12,593 citations
TL;DR: In this paper, the authors describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of diamond-like carbon.
Abstract: Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).
5,400 citations
TL;DR: In this article, the dispersion of peak positions and intensities with excitation wavelength is used to understand the nature of resonant Raman scattering in carbon and how to derive the local bonding and disorder from the Raman spectra.
Abstract: The Raman spectra of a wide range of disordered and amorphous carbons have been measured under excitation from 785 to 229 nm. The dispersion of peak positions and intensities with excitation wavelength is used to understand the nature of resonant Raman scattering in carbon and how to derive the local bonding and disorder from the Raman spectra. The spectra show three basic features, the D and G around 1600 and 1350 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for visible excitation and an extra T peak, for UV excitation, at \ensuremath{\sim}1060 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$. The G peak, due to the stretching motion of ${\mathrm{sp}}^{2}$ pairs, is a good indicator of disorder. It shows dispersion only in amorphous networks, with a dispersion rate proportional to the degree of disorder. Its shift well above 1600 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ under UV excitation indicates the presence of ${\mathrm{sp}}^{2}$ chains. The dispersion of the D peak is strongest in ordered carbons. It shows little dispersion in amorphous carbon, so that in UV excitation it becomes like a density-of-states feature of vibrations of ${\mathrm{sp}}^{2}$ ringlike structures. The intensity ratio $I(D)/I(G)$ falls with increasing UV excitation in all forms of carbon, with a faster decrease in more ordered carbons, so that it is generally small for UV excitation. The T peak, due to ${\mathrm{sp}}^{3}$ vibrations, only appears in UV Raman, lying around 1060 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for H-free carbons and around 980 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ in hydrogenated carbons. In hydrogenated carbons, the ${\mathrm{sp}}^{3}{\mathrm{C}\ensuremath{-}\mathrm{H}}_{x}$ stretching modes around 2920 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ can be clearly detected for UV excitation. This assignment is confirmed by deuterium substitution.
2,553 citations
TL;DR: It is shown how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen, and the assignment of the peaks at 1150 and 1480 cm−1 often observed in nanodiamond.
Abstract: Raman spectroscopy is a standard characterization technique for any carbon system. Here we review the Raman spectra of amorphous, nanostructured, diamond-like carbon and nanodiamond. We show how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen. The measured spectra change with varying excitation energy. By visible and ultraviolet excitation measurements, the G peak dispersion can be derived and correlated with key parameters, such as density, sp(3) content, elastic constants and chemical composition. We then discuss the assignment of the peaks at 1150 and 1480 cm(-1) often observed in nanodiamond. We review the resonant Raman, isotope substitution and annealing experiments, which lead to the assignment of these peaks to trans-polyacetylene.
2,172 citations
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Abstract: Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets for electrons on Si are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as gate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1−xZrxTiO3 and SrBi2Ta2O9 which are used in nonvolatile memories.
1,947 citations
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TL;DR: Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability as discussed by the authors, and its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability.
Abstract: The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light-emitting devices to touch screens, photodetectors and ultrafast lasers. Here we review the state-of-the-art in this emerging field.
6,863 citations
TL;DR: In this article, the authors focus on the origin of the D and G peaks and the second order of D peak and show that the G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers.
6,496 citations
6,213 citations
TL;DR: The field of photocatalysis can be traced back more than 80 years to early observations of the chalking of titania-based paints and to studies of the darkening of metal oxides in contact with organic compounds in sunlight as discussed by the authors.
5,729 citations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...
5,711 citations