John W. Palmour

TL;DR: In this article, a high electron mobility transistor (HEMT) is described that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate and an insulating gallium nitride layer on buffer layer, an active structure of aluminum gallium-nitride on the gallium oxide layer, a passivation layer on active structure, and respective source, drain, and gate contacts to the active structure.

TL;DR: In this paper, the authors report switching performance of a new 1700-V, 50-A SiC MOSFET designed and developed by Cree, Inc. and compare it with other SiC devices.

TL;DR: In this article, a method of etching silicon carbide targets was proposed. But the method was based on a reactive ion plasma, which is formed from a gas which is easily dissociated into its elemental species in the plasma, for which all of the dissociated elemental species are volatile in the plasmas, and for which at least one of the elemental species is reactive with silicon carbides, and which material reacts with a dissociated species to prevent contamination with either sputtered materials from the electrode or polymerized species from the plasma.

TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.

TL;DR: In this paper, it was shown that monocrystalline diamond and silicon carbide can be achieved at or below 1 atm total pressure and at a temperature T, which is the highest operating temperature ever achieved for a field effect device.