J
Jon-Yiew Gan
Researcher at National Tsing Hua University
Publications - 51
Citations - 10536
Jon-Yiew Gan is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Thin film & Amorphous solid. The author has an hindex of 20, co-authored 48 publications receiving 7016 citations.
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Journal ArticleDOI
Nanostructured High-Entropy Alloys with Multiple Principal Elements: Novel Alloy Design Concepts and Outcomes
Jien-Wei Yeh,Swe-Kai Chen,Su-Jien Lin,Jon-Yiew Gan,Tsung-Shune Chin,Tsung-Shune Chin,Tao-Tsung Shun,Chun-Huei Tsau,Shou-Yi Chang +8 more
TL;DR: A new approach for the design of alloys is presented in this paper, where high-entropy alloys with multi-principal elements were synthesized using well-developed processing technologies.
Journal ArticleDOI
Formation of simple crystal structures in Cu-Co-Ni-Cr-Al-Fe-Ti-V alloys with multiprincipal metallic elements
Jien-Wei Yeh,Su-Jien Lin,Tsung-Shune Chin,Jon-Yiew Gan,Swe-Kai Chen,Tao-Tsung Shun,Chung-Huei Tsau,Shou-Yi Chou +7 more
TL;DR: In this article, four alloys containing multiprincipal metallic elements (≥5 elements) were prepared by casting, splat quenching, and sputtering, and their microstructures and crystal structures were investigated.
Journal ArticleDOI
Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
Chang-Po Hsiung,Hsin-Wei Liao,Jon-Yiew Gan,Tai-Bo Wu,J. Hwang,Frederick T. Chen,Ming-Jinn Tsai +6 more
TL;DR: This paper reports on the formation and rupture of Ag nanofilament on planar Ag/TiO2/Pt cells using visual observation, finding that during the forming process, the filament tends to stay very thin.
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Thermal Stability and Performance of NbSiTaTiZr High-Entropy Alloy Barrier for Copper Metallization
Ming-Hung Tsai,Ming-Hung Tsai,Chun Wen Wang,Che-Wei Tsai,Wan Jui Shen,Jien-Wei Yeh,Jon-Yiew Gan,Wen-Wei Wu +7 more
TL;DR: In this paper, a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barrier, was proposed for Cu metallization, and its performance was evaluated at high temperatures.
Journal ArticleDOI
Diffusion barrier properties of AlMoNbSiTaTiVZr high-entropy alloy layer between copper and silicon
TL;DR: The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper metallization has been investigated in this paper, and it was determined to prevent copper-silicide formation up to 700°C for 30min.