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Jonathan H. Beck

Bio: Jonathan H. Beck is an academic researcher from Columbia University. The author has contributed to research in topics: Organic semiconductor & Graphene nanoribbons. The author has an hindex of 4, co-authored 6 publications receiving 97 citations.

Papers
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Journal ArticleDOI
22 Jun 2015-ACS Nano
TL;DR: It is found that the C60 molecules in the deposited film act as electron acceptors for graphene, yielding increased hole doping in the graphene layer, resulting in longer-lived positive conductivity transient, attributed to photoinduced hole doping of graphene by interfacial charge transfer.
Abstract: We examine charge transfer interactions in the hybrid system of a film of C60 molecules deposited on single-layer graphene using Raman spectroscopy and Terahertz (THz) time-domain spectroscopy. In the absence of photoexcitation, we find that the C60 molecules in the deposited film act as electron acceptors for graphene, yielding increased hole doping in the graphene layer. Hole doping of the graphene film by a uniform C60 film at a level of 5.6 × 1012/cm2 or 0.04 holes per interfacial C60 molecule was determined by the use of both Raman and THz spectroscopy. We also investigate transient charge transfer occurring upon photoexcitation by femtosecond laser pulses with a photon energy of 3.1 eV. The C60/graphene hybrid exhibits a short-lived (ps) decrease in THz conductivity, followed by a long-lived increase in conductivity. The initial negative photoconductivity transient, which decays within 2 ps, reflects the intrinsic photoresponse of graphene. The longer-lived positive conductivity transient, with a li...

69 citations

Journal ArticleDOI
TL;DR: The use of Raman spectroscopy, atomic force microscopy, and scanning electron microscopy are used to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film, and to demonstrate the transfer method's compatibility with organic semiconductors.
Abstract: Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method’s compatibility with organic semiconductors, we fabricate three class...

16 citations

Journal ArticleDOI
TL;DR: In this article, the authors demonstrate that suboptical-wavelength nanostructured electrodes (NEs) improve fill factor (FF) in organic photovoltaic devices without compromising open-circuit voltage or shortcircuit current.
Abstract: In this study, we demonstrate that suboptical-wavelength nanostructured electrodes (NEs) improve fill factor (FF) in organic photovoltaic devices without compromising open-circuit voltage or short-circuit current. We attribute this improvement to efficient charge collection by the NEs, which reduce recombination in low-mobility organic semiconductors. NEs increase the FF of planar heterojunction devices with boron subphthalocyanine chloride (SubPc)/C $_{60}$ from 28% to 40%. Optical simulations and external quantum efficiency measurements show that improved charge collection, rather than light trapping, is the mechanism for device improvement. Our findings suggest that NEs can be optimized for a given material set to improve FF performance, which is important for improving organic photovoltaic power conversion efficiency.

12 citations

Journal ArticleDOI
TL;DR: A reflectivity-based cerebral blood volume sensor comprised of surface-mount light-emitting diodes on a flexible substrate with integrated photodetectors in a form factor suitable for direct brain contact and chronic implantation is demonstrated.
Abstract: We demonstrate a reflectivity-based cerebral blood volume sensor comprised of surface-mount light-emitting diodes on a flexible substrate with integrated photodetectors in a form factor suitable for direct brain contact and chronic implantation. This reflectivity monitor is able to measure blood flow through the change of the surface reflectivity and, through this mechanism, detect the cerebral-blood-volume changes associated with epileptic seizures with a signal-to-noise (SNR) response of 42 dB. The device is tested in an in vivo model confirming its compatibility and sensitivity. The data taken demonstrate that placing the sensor into direct brain contact improves the SNR by more than four orders of magnitude over current noncontact technologies.

10 citations

Journal ArticleDOI
TL;DR: In this paper, a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection is described.
Abstract: We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach is applied here to a ultra-thin film solar cell with a SubPc/C60 photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980 mA/cm2 for 30 nm and 45 nm SubPc/C60 heterojunction layer thicknesses, respectively. These values...

4 citations


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Journal ArticleDOI
TL;DR: An overview on the most relevant synthetic approaches for the covalent and non-covalent functionalization and characterization of GBMs of electroactive units and their application in solar energy conversion schemes and energy production is offered.
Abstract: Graphene-based materials (GBMs), with graphene, their most known member, at the head, constitute a large family of materials which has aroused the interest of scientists working in different research fields such as chemistry, physics, or materials science, to mention a few, arguably as no other material before. In this review, we offer a general overview on the most relevant synthetic approaches for the covalent and non-covalent functionalization and characterization of GBMs. Moreover, some representative examples of the incorporation into GBMs of electroactive units such as porphyrins, phthalocyanines, or ferrocene, among others, affording electron donor–acceptor (D–A) hybrids are presented. For the latter systems, the photophysical characterization of their ground- and excited-state features has also been included, paying particular attention to elucidate the fundamental dynamics of the energy transfer and charge separation processes of these hybrids. For some of the presented architectures, their application in solar energy conversion schemes and energy production has been also discussed.

327 citations

Journal Article
TL;DR: This study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler.
Abstract: Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of approximately 4 ns(-1), in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler.

304 citations

Journal ArticleDOI
11 Oct 2016-ACS Nano
TL;DR: The structural and electronic properties of the direct growth of multilayered GaSe by molecular beam epitaxy on graphene are reported and a deeper understanding of the interlayer interactions and the electronic structure of the GaSe/graphene vdW heterostructure is allowed.
Abstract: Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by molecular beam epitaxy on graphene. Reflection high-energy electron diffraction images exhibited sharp streaky features indicative of a high-quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW heterointerface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting to an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of the few layers of GaSe are located at the Γ point at a bindin...

144 citations

Journal ArticleDOI
TL;DR: The surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference.
Abstract: Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

143 citations

Journal ArticleDOI
TL;DR: For the first time, a bi-directional (positive and negative) photoresponse is demonstrated at different wavelengths, due to the opposite charge transfer direction of the photoexcited carriers enforced by the unique band alignment.
Abstract: A graphene-semiconductor heterojunction is very attractive for realizing highly sensitive phototransistors due to the strong absorption of the semiconductor layer and the fast charge transport in the graphene. However, the photoresponse is usually limited to a narrow spectral range determined by the bandgap of the semiconductor. Here, an organic heterojunction (C60 /pentacene) is incorporated on graphene to realize a broadband (405-1550 nm) phototransistor with a high gain of 5.2 × 105 and a response time down to 275 µs. The visible and near-infrared parts of the photoresponsivity (9127 A W-1 @650 nm and 1800 A W-1 @808 nm) come from the absorption of the organic layer and the graphene, respectively. For the first time, a bi-directional (positive and negative) photoresponse is demonstrated at different wavelengths, due to the opposite charge transfer direction of the photoexcited carriers enforced by the unique band alignment. Such tunability will enable new functionalities such as large-scale real-time optical image and infrared focal plane array detection in the future.

100 citations