Jonathan Z. Sun

Bio: Jonathan Z. Sun is an academic researcher from IBM. The author has contributed to research in topics: Magnetoresistance & Magnetic field. The author has an hindex of 58, co-authored 185 publications receiving 13382 citations.

Spin-current interaction with a monodomain magnetic body: A model study

Abstract: I examined the consequence of a spin-current-induced angular momentum deposition in a monodomain Stoner-Wohlfarth magnetic body. The magnetic dynamics of the particle are modeled using the Landau-Lifshitz-Gilbert equation with a phenomenological damping coefficient $\ensuremath{\alpha}.$ Two magnetic potential landscapes are studied in detail: One uniaxial, the other uniaxial in combination with an easy-plane potential term that could be used to model a thin-film geometry with demagnetization. Quantitative predictions are obtained for comparison with experiments.

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Abstract: Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

Pairing symmetry and flux quantization in a tricrystal superconducting ring of YBa2Cu3O7- delta.

Abstract: We have used the concept of flux quantization in superconducting $\mathrm{Y}{\mathrm{Ba}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7\ensuremath{-}\ensuremath{\delta}}$ rings with 0, 2, and 3 grain-boundary Josephson junctions to test the pairing symmetry in high-${T}_{c}$ superconductors. The magnetic flux threading these rings at 4.2 K is measured by employing a scanning superconducting quantum interference device microscope. Spontaneous magnetization of a half magnetic flux quantum, $\frac{{\ensuremath{\Phi}}_{0}}{2}=\frac{h}{4e}$ has been observed in the 3-junction ring, but not in the 2-junction rings. These results are consistent with $d$-wave pairing symmetry.

Measurement of the spin-transfer-torque vector in magnetic tunnel junctions

Abstract: The transfer of spin angular momentum from a spin-polarized current to a ferromagnet can generate sufficient torque to reorient the magnet’s moment. This torque could enable the development of efficient electrically actuated magnetic memories and nanoscale microwave oscillators. Yet difficulties in making quantitative measurements of the spin-torque vector have hampered understanding. Here we present direct measurements of both the magnitude and direction of the spin torque in magnetic tunnel junctions, the type of device of primary interest for applications. At low bias V, the differential torque dτ/dV lies in the plane defined by the electrode magnetizations, and its magnitude is in excellent agreement with recent predictions for near-perfect spin-polarized tunnelling. We find that the strength of the in-plane differential torque remains almost constant with increasing bias, despite a substantial decrease in the device magnetoresistance, and that with bias the torque vector also rotates out of the plane.

Time-resolved reversal of spin-transfer switching in a nanomagnet.

Abstract: Time-resolved measurements of spin-transfer-induced (STI) magnetization reversal were made in current-perpendicular spin-valve nanomagnetic junctions subject to a pulsed current bias. These results can be understood within the framework of a Landau-Lifshitz-Gilbert equation that includes STI corrections and a Langevin random field for finite temperature. Comparison of these measurements with model calculations demonstrates that spin-transfer induced excitation is responsible for the observed magnetic reversal in these samples.

Spintronics: Fundamentals and applications

Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

Multiferroic and magnetoelectric materials

Abstract: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.

Spin-torque switching with the giant spin hall effect of tantalum

Abstract: Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

Abstract: Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.