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Jonathan Zachary Tischler

Researcher at Oak Ridge National Laboratory

Publications -  88
Citations -  3211

Jonathan Zachary Tischler is an academic researcher from Oak Ridge National Laboratory. The author has contributed to research in topics: Scattering & Dislocation. The author has an hindex of 29, co-authored 85 publications receiving 2990 citations.

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Three-dimensional X-ray structural microscopy with submicrometre resolution

TL;DR: A three-dimensional X-ray microscopy technique that uses polychromatic synchrotron X-rays to probe local crystal structure, orientation and strain tensors with submicrometre spatial resolution is described, applicable to single-crystal, polycrystalline, composite and functionally graded materials.
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X-ray microbeam measurements of individual dislocation cell elastic strains in deformed single-crystal copper

TL;DR: The first direct, spatially resolved measurements of the elastic strains within individual dislocation cells in copper single crystals deformed in tension and compression along 〈001〉 axes are presented.
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Symmetry Relationship and Strain-Induced Transitions between Insulating M1 and M2 and Metallic R phases of Vanadium Dioxide

TL;DR: It is shown that the competition between M1 and M2 phases is purely lattice-symmetry-driven, and insights open the door toward more systematic approaches to synthesis of VO2 nanostructures in desired phase states and to use of external fields in the control of the VO2 phase states.
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Doping-Based Stabilization of the M2 Phase in Free-Standing VO2 Nanostructures at Room Temperature

TL;DR: A new high-yield method of doping VO(2) nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott transition field-effect transistor without an accompanying structural transition.
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Elastically driven anisotropic percolation in electronic phase-separated manganites

TL;DR: In this article, anisotropic electronic domain formation along one axis of a pseudocubic perovskite single-crystal thin-film manganite was induced by epitaxially locking it to an orthorhombic substrate.