Jong Beom Park

Bio: Jong Beom Park is an academic researcher from North Carolina State University. The author has contributed to research in topics: Node (circuits) & Dynamic random-access memory. The author has an hindex of 2, co-authored 3 publications receiving 9 citations.

3D-enabled customizable embedded computer (3DECC)

Abstract: This paper describes a 3D computer architecture designed to achieve the lowest possible power consumption for “embedded applications” like radar and signal processing. It introduces several unique concepts including a low-power SIMD tile, low-power 3D memories, and 3D and 2.5D interconnect that is circuit switched so it can be tuned at run-time for a specific application. When conservatively projected to the 7 nm node, simulations of the architecture show potential for exceeding 75 GFLOPS/W, about 20x better than today's CPUs and GPUs. This translates to 13 pJ/FLOP. This paper will focus on the 3D specific aspects of the design. This architecture is highly suited to DSP and multimedia workflows.

3-D-DATE: A Circuit-Level Three-Dimensional DRAM Area, Timing, and Energy Model

Abstract: In this paper, we present 3-D-DATE, a circuit-level dynamic random access memory (DRAM) area, timing, and energy model that models both the front and back end of 3-D integrated DRAM designs from 90–16 nm, across a broader range of emerging transistor devices and through-silicon vias. This paper improves upon previous studies by providing detailed process models all the way down to the 16-nm technology node and incorporating DRAMs implemented with emerging gate transistor devices. Finally, we validate the model against both several commodity planar and 3-D DRAMs, from 80- to 30-nm process nodes, with the following metrics: energy with a mean error of 5%–1% and a standard deviation up to 9.8%, speed with a mean error of 13%–27%, and a standard deviation up to 24% and area within 3%–1% and a standard a standard deviation up to 4.2%.

Applications and design styles for 3DIC

Abstract: 3D technologies offer significant potential to improve raw performance and performance per unit power. After exploiting TSV technologies for cost reduction and increasing memory bandwidth, the next frontier is to create more sophisticated solutions that promise further increases in power/performance beyond those attributable to memory interfaces alone. These include heterogeneous integration and exploitation of the high amounts of interconnect available to provide for customization. Challenges include the creation of physical standards and the design of sophisticated static and dynamic thermal management methods.

Sieve: scalable in-situ DRAM-based accelerator designs for massively parallel k-mer matching

Abstract: The rapid influx of biosequence data, coupled with the stagnation of the processing power of modern computing systems, highlights the critical need for exploring high-performance accelerators that can meet the ever-increasing throughput demands of modern bioinformatics applications. This work argues that processing in memory (PIM) is an effective solution to enhance the performance of k-mer matching, a critical bottleneck stage in standard bioinformatics pipelines, that is characterized by random access patterns and low computational intensity. This work proposes three DRAM-based in-situ k-mer matching accelerator designs (one optimized for area, one optimized for throughput, and one that strikes a balance between hardware cost and performance), dubbed Sieve, that leverage a novel data mapping scheme to allow for simultaneous comparisons of millions of DNA base pairs, lightweight matching circuitry for fast pattern matching, and an early termination mechanism that prunes unnecessary DRAM row activation to reduce latency and save energy. Evaluation of Sieve using state-of-the-art workloads with real-world datasets shows that the most aggressive design provides an average of 326x/32x speedup and 74X/48x energy savings over multi-core-CPU/GPU baselines for k-mer matching.

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO 2 Memory

Abstract: In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO2/n-type Si-based resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO, annealing was performed at 200, 300, 400, and 500 °C for approximately 1 h in order to analyze the effect of temperature change on the ReRAM after post annealing in a furnace. As a result of measuring the current-voltage curve, the a-IGZO/TiO2-based ReRAM annealed at 400 °C reached compliance current in a low-resistance state, and showed the most complete hysteresis curve. In the a-IGZO layer annealed at 400 °C, the O1/Ototal value increased most significantly, to approximately 78.2%, and the O3/Ototal value decreased the most, to approximately 2.6%. As a result, the a-IGZO/TiO2-based ReRAM annealed at 400 °C reduced conductivity and prevented an increase in leakage current caused by oxygen vacancies with sufficient recovery of the metal-oxygen bond. Scanning electron microscopy analysis revealed that the a-IGZO surface showed hillocks at a high post annealing temperature of 500 °C, which greatly increased the surface roughness and caused the surface area performance to deteriorate. Finally, as a result of measuring the capacitance-voltage curve in the a-IGZO/TiO2-based ReRAM in the range of -2 V to 4 V, the accumulation capacitance value of the ReRAM annealed at 400 °C increased most in a nonvolatile behavior.

3D Packaging Architectures and Assembly Process Design

Abstract: In this chapter, the advantages and limitations of 3D architectures are discussed to provide context for why 3D stacking has become a key area of interest for product architects, why it has generated broad industry attention, and why its adoption has been tenous. The primary focus of this chapter is on 3D architectures that use Through Silicon Vias (TSVs), while other System In Package (SIP) architectures that do not rely on TSVs are discussed for completeness. The key elements of a TSV-based 3D architecture are described, followed by a description of the three methods of manufacturing wafers with TSVs (i.e., Via-First, Via-Middle, and Via-Last). An analysis of the different assembly process flows for 3D structures, broadly classified as (a) Wafer-to-Wafer (W2W), (b) Die-to-Wafer (D2W), and (c) Die-to-Die (D2D) assembly processes, is covered. Key design, assembly process, test process, and materials considerations for each of these flows are described. The chapter concludes with a discussion of current and anticipated challenges for 3D architectures.

Thermal Pathfinding for 3-D ICs

Abstract: System architects traditionally use high-level models of component blocks to predict trends for various design metrics. However, with continually increasing design complexity and a confusing array of manufacturing choices, system-level design decisions cannot be made without considering physical-level details. This effect is more pronounced for 3-D integrated circuits (ICs) because it provides a plethora of physical-level design choices, such as the number of stacking layers and the type of 3-D bonding method, along with the choices provided by 2-D ICs. Thus, it is necessary for system-level flows to predict the complex interactions among system performance, power, temperature, floorplanning, process technology, computer architecture, and software/workloads. This is often called pathfinding. This paper presents a pathfinding flow that integrates SystemC transaction-level electrical and dynamic thermal simulations. The goal of this flow is to pass complex physical constraints to system architects in a convenient form. The applicability of the proposed flow is shown using an example stacking of two processor cores and L2 cache in two-tier 3-D stack.

Computing in 3D

Abstract: 3D technologies offer significant potential to improve total performance and performance per unit of power. After exploiting TSV technologies for cost reduction and increasing memory bandwidth, the next frontier is to create sophisticated logic on logic solutions that promise further increases in performance/power beyond those attributable to memory interfaces alone. These include heterogeneous integration for computing and exploitation of the high amounts of 3D interconnect available to reduce total interconnect power. Challenges include access for prototype quantities and the design of sophisticated static and dynamic thermal management methods and technologies, as well as test.