scispace - formally typeset
Search or ask a question

Showing papers by "Jong Hyun Ahn published in 2011"


Journal ArticleDOI
11 May 2011-ACS Nano
TL;DR: It is shown that graphene provides a promising biocompatible scaffold that does not hamper the proliferation of human mesenchymal stem cells and accelerates their specific differentiation into bone cells, demonstrating graphene's potential for stem cell research.
Abstract: Current tissue engineering approaches combine different scaffold materials with living cells to provide biological substitutes that can repair and eventually improve tissue functions. Both natural and synthetic materials have been fabricated for transplantation of stem cells and their specific differentiation into muscles, bones, and cartilages. One of the key objectives for bone regeneration therapy to be successful is to direct stem cells’ proliferation and to accelerate their differentiation in a controlled manner through the use of growth factors and osteogenic inducers. Here we show that graphene provides a promising biocompatible scaffold that does not hamper the proliferation of human mesenchymal stem cells (hMSCs) and accelerates their specific differentiation into bone cells. The differentiation rate is comparable to the one achieved with common growth factors, demonstrating graphene’s potential for stem cell research.

827 citations


Journal ArticleDOI
12 May 2011-ACS Nano
TL;DR: Graphene films grown on Cu and Ni metal catalysts by chemical vapor deposition and transferred onto the SiO(2)/Si substrate effectively reduced the adhesion and friction forces, and multilayer graphene films that were a few nanometers thick had low coefficients of friction comparable to that of bulk graphite.
Abstract: As an atomically thin material with low surface energy, graphene is an excellent candidate for reducing adhesion and friction when coated on various surfaces. Here, we demonstrate the superior adhesion and frictional characteristics of graphene films which were grown on Cu and Ni metal catalysts by chemical vapor deposition and transferred onto the SiO2/Si substrate. The graphene films effectively reduced the adhesion and friction forces, and multilayer graphene films that were a few nanometers thick had low coefficients of friction comparable to that of bulk graphite.

466 citations


Journal ArticleDOI
TL;DR: Graphene-based, flexible, transparent heaters based on large-scale graphene films synthesized by chemical vapor deposition on Cu foils show sheet resistance as low as ∼43 Ohm/sq with ∼89% optical transmittance, which are ideal as low-voltage transparentheaters.
Abstract: We demonstrate high-performance, flexible, transparent heaters based on large-scale graphene films synthesized by chemical vapor deposition on Cu foils. After multiple transfers and chemical doping processes, the graphene films show sheet resistance as low as ∼43 Ohm/sq with ∼89% optical transmittance, which are ideal as low-voltage transparent heaters. Time-dependent temperature profiles and heat distribution analyses show that the performance of graphene-based heaters is superior to that of conventional transparent heaters based on indium tin oxide. In addition, we confirmed that mechanical strain as high as ∼4% did not substantially affect heater performance. Therefore, graphene-based, flexible, transparent heaters are expected to find uses in a broad range of applications, including automobile defogging/deicing systems and heatable smart windows.

438 citations


Journal ArticleDOI
TL;DR: This work presents stretchable, printable, and transparent transistors composed of monolithically patterned graphene films, capable of use as semiconducting channels as well as the source/drain electrodes.
Abstract: With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 ± 136 and 422 ± 52 cm2/(V s), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.

357 citations


Journal ArticleDOI
TL;DR: In this paper, a cost-effective, scalable, and sustainable process was developed to form graphene films from solution-processed common polymers directly on a SiO2/Si substrate.
Abstract: Because the direct formation of large, patterned graphene layers on active electronic devices without any physical transfer process is an ultimate important research goal for practical applications, we first developed a cost-effective, scalable, and sustainable process to form graphene films from solution-processed common polymers directly on a SiO2/Si substrate. We obtained few-layer graphene by heating the thin polymer films covered with a metal capping layer in a high-temperature furnace under low vacuum in an Ar/H2 atmosphere. We find that the metal capping layer appears to have two functions: prevention of vaporization of dissociated molecules and catalysis of graphene formation. We suggest that polymer-derived graphene growth directly on inert substrates in active electronic devices will have great advantages because of its simple, inexpensive, and safer process.

171 citations


Journal ArticleDOI
TL;DR: A novel graphene-on-organic film fabrication method that is compatible with a batch microfabrication process was developed and used for electromechanically driven microactuators, enabling the successful demonstration of transparent graphene-based organic microactsuators.
Abstract: A novel graphene-on-organic film fabrication method that is compatible with a batch microfabrication process was developed and used for electromechanically driven microactuators. A very thin layer of graphene sheets was monolithically integrated and the unique material characteristics of graphene including negative thermal expansion and high electrical conductivity were exploited to produce a bimorph actuation. A large displacement with rapid response was observed while maintaining the low power consumption. This enabled the successful demonstration of transparent graphene-based organic microactuators.

163 citations


Journal ArticleDOI
01 Jan 2011-EPL
TL;DR: In this paper, a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates was reported, which demonstrated ultra-lowvoltage operation of graphene field effect transistors within ± 1 V with maximum doping exceeding 1013 cm−2 and on-off ratios larger than 10 times.
Abstract: Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO2 have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT), we demonstrate ultra-low-voltage operation of graphene field effect transistors within ±1 V with maximum doping exceeding 1013 cm− 2 and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.

91 citations


Patent
13 Jan 2011
TL;DR: In this article, a method for forming a graphene protective film having gas and moisture barrier properties is described, and the use of a single-layer or multi-layer graphene protection film can be used as a material for a barrier coating or bags.
Abstract: The present invention relates to a method for forming a graphene protective film having gas and moisture barrier properties, to a graphene protective film formed by the method, and to the use thereof A single-layer or multi-layer graphene protective film can be used as a material for a barrier coating or bags, and improves the gas and moisture barrier properties of a variety of devices in a wide array of industrial fields to thereby maintain the electrical characteristics of devices over a long period of time

47 citations


Patent
23 Dec 2011
TL;DR: In this article, a touch sensor capable of specifying a touch position and a degree of a touch pressure by using graphene as an electrode and/or a strain gauge is provided, and more particular, a touch sensors capable of simultaneously detecting a pressure and a position by means of change in resistance by using GAs.
Abstract: A touch sensor capable of specifying a touch position and/or a degree of a touch pressure by using graphene as an electrode and/or a strain gauge, and more particular, a touch sensor capable of simultaneously detecting a pressure and a position by means of change in resistance by using graphene is provided.

42 citations


Patent
23 Dec 2011
TL;DR: In this article, a touch sensor for measuring a touch position and the degree of touching pressure by using graphin as an electrode and/or a strain gauge is presented, and more particularly a touch sensors for simultaneously detecting pressure and position by means of change in resistance by using the graphin.
Abstract: Provided is a touch sensor for measuring a touch position and/or the degree of touching pressure by using graphin as an electrode and/or a strain gauge, and more particularly, to a touch sensor for simultaneously detecting pressure and position by means of change in resistance by using the graphin.

29 citations


Patent
22 Apr 2011
TL;DR: In this paper, a graphene roll-to-roll transfer method is provided to enable easy transfer of a large-sized graphene layer on a flexible substrate through roll to-roll etching and/or transfer process.
Abstract: PURPOSE: A graphene roll-to-roll transfer method is provided to enable easy transfer a large-sized graphene layer on a flexible substrate through roll-to-roll etching and/or transfer process. CONSTITUTION: A graphene roll-to-roll transfer method comprises the steps of: forming a laminate(50) including a material-graphene layer-first flexible substrate from a graphene layer(20) formed on a substrate(10) and the first flexible substrate(31) contacted with the graphene layer; and removing the substrate from the laminate and transferring the graphene layer on the first flexible substrate by impregnating the laminate in an etchant(60) using a second roller part(120).

Patent
29 Jul 2011
TL;DR: In this article, a method for preparing graphene by providing a reaction gas including a carbon source and heat onto a substrate, and reacting the same to form a graphene on the substrate, a graphene sheet formed by the method, and a device using the same.
Abstract: The present invention provides a method for preparing graphene by providing a reaction gas including a carbon source and heat onto a substrate, and reacting the same to form a graphene on the substrate, a graphene sheet formed by the method, and a device using the same.

Patent
25 May 2011
TL;DR: In this paper, a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible memory device and a manufacturing method for the same are described.
Abstract: The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same.

Journal ArticleDOI
Deresa Lee1, Kyu-Sung Park1, Jong Hyun Ahn, Nae-Eung Lee1, Yunok Kim1 
TL;DR: The results suggest that not only numerical but also experimental measurements of the deformation and SU-8 coating thickness in electro circuits are useful for enhancing structural stability.
Abstract: Zinc Oxide (ZnO) based Thin Film Transistors (TFTs) have been fabricated and analyzed to investigate mechanical characteristics regarding the stress, strain and deformation of electro circuits using the Finite Element Method (FEM). As the best compromise between the stretching and bending abilities, the coating thickness of SU-8 can be as important for bendability as a neutral mechanical plane. The neutral mechanical plane in electro circuits was designed for obtaining flexibility, e.g., bendability, in a previous numerical study. After that, through experimental validation, we observed what degree of SU-8 thickness was attributable for improved mechanical stability. The results suggest that not only numerical but also experimental measurements of the deformation and SU-8 coating thickness in electro circuits are useful for enhancing structural stability.

Patent
18 Aug 2011
TL;DR: In this paper, the floor number of a flexible transparency heating element using graphene and the manufacturing method thereof are formed differently, and the calorific efficiency of the heating element is multiplied.
Abstract: PURPOSE: The flexibility transparency heating element using graphene and the manufacturing method thereof are formed differently the floor number of graphene. The calorific efficiency of the heating element is multiplied. CONSTITUTION: A graphene layer(140) is at least formed of a flexibility transparent substrate(100) in a single-side. By offering the reaction gas and the heat including the carbon source on the metallic catalyst and reacting the graphene layer is formed. A electrode(120) more than the pair is formed as long as it is connected to the graphene layer. The protective layer is formed in electrode and the graphene layer. The electrode is patterned to the fine structure.

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a thermal prestressing method for steel bridges using thermal expansion and contraction of a cover-plate to provide a combination with the prestress effects of an external prestressing tendon and the section enlargement benefits of the external bonding method.
Abstract: The strengthening of a plate girder bridge with external prestressing tendons is a commonly used method of upgrading existing bridges. Indeed, it has been known to offer advantages such behaviors as increased elastic behaviors under higher loading, increased ultimate resistance, and reduced deflection under service loads. However, this method has notable disadvantages such as stress concentration at anchorages and inefficient live load-carrying capacity. The thermal prestressing method (TPSM) for steel bridges proposed in this study uses thermal expansion and contraction of a cover-plate to provide a combination with the prestress effects of an external prestressing tendon and the section enlargement benefits of the external bonding method.In this study, the basic concepts of the proposed strengthening protocol using multi-stepwise TPSM are presented. The existence of the strengthening effect is well substantiated and the proposed analytical approach is also rigorously verified. The significant strengthen...

Book ChapterDOI
01 Jan 2011
TL;DR: In this paper, the authors review some recent work in the area of micro/nanostructured materials (including wires, ribbons, and single-walled carbon nanotubes) for high-performance devices and circuits on flexible and even stretchable substrates.
Abstract: In this chapter, the authors review some recent work in the area of micro/nanostructured materials (including wires, ribbons, and single-walled carbon nanotubes) for high-performance devices and circuits on flexible and even stretchable substrates, in two- or three-dimensional layouts. Approaches, ranging from self-assembly to dry transfer printing, for fabricating a variety of micro/nanostructured materials are discussed. These methods enable high-performance electronics on plastic or elastomer substrates, as demonstrated in several different application examples. Successful commercial implementation of such techniques represents a significant engineering challenge, but could create interesting opportunities for developing electronic systems such as personal health monitors and hemispherical electronic eye imagers.

Journal ArticleDOI
TL;DR: In this article, an ultra-fast removal of a silicon sacrificial layer for the selective release of a metal structure on a Si substrate was studied, which uses a chemical dry etching method.

Reference EntryDOI
15 Dec 2011
TL;DR: In this article, several classes of high-quality inorganic semiconductor nanomaterials for high-performance flexible and stretchable electronics in two- or three-dimensional layouts are presented.
Abstract: This article reviews several classes of high-quality inorganic semiconductor nanomaterials for high-performance flexible and stretchable electronics in two- or three-dimensional layouts Approaches for fabricating inorganic semiconductors in the forms of wires, ribbons, and membranes, and methods for integrating these materials on flexible substrates are presented Finally, perspectives on the trends for future work related to flexible electronics are described Keywords: flexible electronics; inorganic semiconductor nanomaterials; top-down approach; dry transfer printing; thin-film transistor; stretchable electronics; 3-D heterogeneous integrated circuits

01 Jan 2011
TL;DR: In this paper, the authors demonstrate the superior adhesion and friction properties of multi-layer graphene films, which were grown onCuandNi metal catalysts by chemical vapor deposition and transferred onto the SiO2/Si substrate.
Abstract: As an atomically thin material with low surface energy, graphene is an excellent candidateforreducingadhesionandfrictionwhencoatedonvarioussurfaces.Here,wedemonstrate thesuperioradhesionandfrictionalcharacteristicsofgraphene filmswhichweregrownonCuandNi metal catalysts by chemical vapor deposition and transferred onto the SiO2/Si substrate. The graphene films effectively reduced the adhesion and friction forces, and multilayer graphene films that were a few nanometers thick had low coefficients of friction comparable to that of bulk graphite.

Proceedings ArticleDOI
28 Dec 2011
TL;DR: In this paper, the authors investigated the bendablity and reliability of transparent ZnO TFTs and found that the failure mode of the TFT was confirmed by stress/strain simulation analysis.
Abstract: In this study, we investigated the bendablity and reliability of transparent ZnO TFTs. Transfer printing method was used to make flexible ZnO TFTs. The PET was used as the transparent and flexible plastic substrate which thickness was 188 μm. The bending test and fatigue test were performed to evaluate the mechanical reliability. After reliability tests, the failure mode of ZnO TFTs was analyzed and its results were also confirmed by stress/strain simulation analysis.

Journal ArticleDOI
TL;DR: This study simulated the mechanical characteristics of an OTFT with various compressive stress conditions using COMSOL and the deformation characteristics of the fabricated OTFT were predicted in terms of strain and internal stress.
Abstract: An organic thin film transistor (OTFT) on a flexible substrate with electroplated electrodes has many advantages in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical characteristics of an OTFT with various compressive stress conditions using COMSOL. An analysis model, which was limited to channel, source, and drain, was used to investigate deformation and internal stress concentrations. The channel length is 40 m and the OTFT structure is a top-contact structure. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. The deformation characteristics of the fabricated OTFT were predicted in terms of strain and internal stress.

Journal ArticleDOI
TL;DR: In this article, a structural and electrical design guide for thin-film transistors is proposed, which takes into account the stress and deformation of the bridge to estimate the stress distribution in an film with 0 to 5% stretched on 0.5-thick.
Abstract: ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an film with 0 to 5% stretched on 0.5--thick. The predicted buckle amplitude of bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.