J
Jong Hyun Ahn
Researcher at Yonsei University
Publications - 320
Citations - 44695
Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.
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Patent
Graphene protective film serving as a gas and moisture barrier, method for forming same, and use thereof
TL;DR: In this article, a method for forming a graphene protective film having gas and moisture barrier properties is described, and the use of a single-layer or multi-layer graphene protection film can be used as a material for a barrier coating or bags.
Journal ArticleDOI
Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates
Houk Jang,Houk Jang,Wonho Lee,Sang Min Won,Seoung Yoon Ryu,Donghun Lee,Jae Bon Koo,Seong Deok Ahn,Cheol-Woong Yang,Cheol-Woong Yang,Moon-Ho Jo,Jeong Ho Cho,John A. Rogers,Jong Hyun Ahn +13 more
TL;DR: Deterministic assembly techniques allow integration of single crystal Si nanomembranes into unusual device architectures, including field effect transistors with total thicknesses of less than 12 nm, for potential use in transparent, flexible, and stretchable forms of electronics.
Patent
Graphene protective film for preventing gas and water, method of forming the same and uses of the same
TL;DR: In this article, a graphene protective film for blocking gas and moisture, a formation method thereof and a use thereof are provided to maintain electrical features of the device for a long time by improving gas and humidity blocking features.
Journal ArticleDOI
Additive-free thick graphene film as an anode material for flexible lithium-ion batteries
TL;DR: A thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states is demonstrated.
Journal ArticleDOI
Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications.
Yi Rang Lim,Jin Kyu Han,Yeoheung Yoon,Jae Bok Lee,Cheolho Jeon,Min Choi,Hyunju Chang,Noejung Park,Jung Hwa Kim,Zonghoon Lee,Wooseok Song,Sung Myung,Sun Sook Lee,Ki-Seok An,Jong Hyun Ahn,Jongsun Lim +15 more
TL;DR: Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.