Author
Jong Hyun Ahn
Other affiliations: National University of Singapore, University of Illinois at Urbana–Champaign, Pohang University of Science and Technology ...read more
Bio: Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.
Papers published on a yearly basis
Papers
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TL;DR: A simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates, which has the dual benefits of converting the waste to a valuable product, and reducing pollution.
Abstract: We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm(2)·V(-1)·s(-1)), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution.
34 citations
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TL;DR: In this article, the authors identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions to ease and to expedite their deployment, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations.
Abstract: Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.
34 citations
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TL;DR: In this paper, the excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing.
Abstract: The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
33 citations
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25 Jun 2012TL;DR: The present disclosure relates to a stable graphene film, a preparing method of the stable graphene films, a graphene transparent electrode, and a touch screen including the stable graphite film as mentioned in this paper.
Abstract: The present disclosure relates to a stable graphene film, a preparing method of the stable graphene film, a graphene transparent electrode including the stable graphene film, and a touch screen including the stable graphene film.
33 citations
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TL;DR: In this paper, the degradation behaviors and mechanisms of monolayer molybdenum disulfide (MoS2) crystals with different misorientation angles are explored, indicating that intrinsic defects in the atomic structure of the material are the cause of the degradation.
Abstract: Monolayer molybdenum disulfide (MoS2) exhibits unique semiconducting and bioresorption properties, giving this material enormous potential for electronic/biomedical applications, such as bioabsorbable electronics. In this regard, understanding the degradation performance of monolayer MoS2 in biofluids allows modulation of the properties and lifetime of related bioabsorbable devices and systems. Herein, the degradation behaviors and mechanisms of monolayer MoS2 crystals with different misorientation angles are explored. High-angle grain boundaries (HAGBs) biodegrade faster than low-angle grain boundaries (LAGBs), exhibiting degraded edges with wedge and zigzag shapes, respectively. Triangular pits that formed in the degraded grains have orientations opposite to those of the parent crystals, and these pits grow into larger pits laterally. These behaviors indicate that the degradation is induced and propagated based on intrinsic defects, such as grain boundaries and point defects, because of their high chemical reactivity due to lattice breakage and the formation of dangling bonds. High densities of dislocations and point defects lead to high chemical reactivity and faster degradation. The structural cause of MoS2 degradation is studied, and a feasible approach to study changes in the properties and lifetime of MoS2 by controlling the defect type and density is presented. The results can thus be used to promote the widespread use of two-dimensional materials in bioabsorption applications. The mechanism by which two-dimensional electronic materials decompose in an environment similar to that inside the human body has been identified by researchers in South Korea. Biodegradable, or transient, electronic devices disappear when no longer needed. In biomedical applications, for example, a transient sensor in the body degrades or dissolves, eliminating the need for surgery to remove it. Jong-Hyun Ahn from Yonsei University in Seoul and co-workers investigated the degradation of crystals of the two-dimensional semiconductor molybdenum disulfide (MoS2), each having the triangular shape. They showed that the rate of decomposition is dependent on the angle of misalignment between the two crystals: crystals with a larger misalignment biodegrade faster than those more closely aligned. This behavior indicates that intrinsic defects in the atomic structure of the material are the cause of the degradation. We present the degradation behaviors and mechanisms of CVD-grown monolayer MoS2 crystals relevant to bioabsorbable electronics, triggered and extended based on the intrinsic defects such as grain boundaries and point defects for their high chemical reactivity caused by broken lattice and dangling bonds. Higher misorientation angle leads to higher degradation speed. This work paves the way for lifetime modulation and bioabsorbable device application by using 2D materials.
32 citations
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01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.
29,323 citations
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28,685 citations
28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations
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TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.
13,348 citations