Jong Hyun Ahn

Bio: Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.

Assembly of Foldable 3D Microstructures Using Graphene Hinges.

Abstract: Origami/kirigami-inspired 3D assembly approaches have recently attracted attention for a variety of applications, such as advanced optoelectronic devices and biomedical sensors. The results reported here describe an approach to construct classes of multiple foldable 3D microstructures that involve deformations that typical conductive materials, such as conventional metal films, cannot tolerate. Atomically thin graphene sheets serve as folding hinges during a process of 2D to 3D conversion via a deterministic buckling process. The exceptional mechanical properties of graphene enable the controlled, geometric transformation of a 2D precursor bonded at selective sites on a prestretched elastomer into folded 3D microstructures, in a reversible manner without adverse effects on the electrical properties. Experimental and computational investigations of the folding mechanisms for such types of 3D objects reveal the underlying physics and the dependence of the process on the thickness of the graphene/supporting films that define the hinges.

Unconventional Transport through Graphene on SrTiO3: A Plausible Effect of SrTiO3 Phase-Transitions

Abstract: High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous ‘slope-break' in the temperature-dependent resistivity for T = 50 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

Graphene Based Nanogenerator for Energy Harvesting

Abstract: Development of energy harvesting system becomes one of the most important necessities of today. In this context, nanogenerators (NGs) have attracted considerable attentions in recent years due to their potential applications such as self-powered portable devices. This review article addresses the significant development of NGs systems based on semiconducting and insulating piezoelectric materials. Further, the need of mechanical flexibility and optical transparency on the demand of various electronic applications has been highlighted. In addition, we discussed some recent studies on graphene-based NGs which have been explored for stable performance of NGs.

Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering.

Abstract: Silicon has been widely used in the microelectronics industry. However, its photonic applications are restricted to visible and partial near-infrared spectral range owing to its fundamental optical bandgap (1.12 eV). With recent advances in strain engineering, material properties, including optical bandgap, can be tailored considerably. This paper reports the strain-induced shrinkage in the Si bandgap, providing photosensing well beyond its fundamental absorption limit in Si nanomembrane (NM) photodetectors (PDs). The Si-NM PD pixels were mechanically stretched (biaxially) by a maximum strain of ~3.5% through pneumatic pressure-induced bulging, enhancing photoresponsivity and extending the Si absorption limit up to 1550 nm, which is the essential wavelength range of the lidar sensors for obstacle detection in self-driving vehicles. The development of deformable three-dimensional optoelectronics via gas pressure-induced bulging also facilitated the realization of unique device designs with concave and convex hemispherical architectures, which mimics the electronic prototypes of biological eyes.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.