Jong Hyun Ahn

Bio: Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.

Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

Abstract: We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.

Universality of strain-induced anisotropic friction domains on 2D materials

Abstract: Van der Waals two-dimensional (2D) materials have shown various physical characteristics depending on their growth methods and conditions. Among those characteristics, the surface structural properties are crucial for the application of 2D materials, as the surface structures readily affect their atomic arrangements and/or interaction with substrates due to their atomic-scale thicknesses. Here, we report on the anisotropic friction domains of MoS2 grown not only by chemical vapor deposition (CVD) under various sulfur pressure conditions but also by a mechanical exfoliation process. The 180° periodicity of each domain and the 60° shift between adjacent domains indicate the presence of linearly aligned structures along the armchair direction of MoS2, which is determined by the optical second-harmonic generation method. The anisotropic friction domains of CVD-grown MoS2 flakes may be attributed to linearly aligned ripples caused by an inhomogeneous strain field distribution, which is due, in turn, to randomly formed nucleation sites on the substrate. The universality of the anisotropic frictional behaviors of 2D materials, including graphene, hBN, and WS2 with honeycomb lattice stacking, which differ from ReSe2 with a distorted triclinic 1T’ structure, supports our assumption based on the linearly aligned ripples along the crystallographic axes, which result from an inhomogeneous strain field. By measuring friction forces on graphene-like surfaces, South Korean researchers have uncovered evidence of ripple structures too tiny to see with typical electron microscopes. Devices made from two-dimensional (2D) materials often perform at less than their full theoretical potential. Bae Ho Park from Konkuk University in Seoul and colleagues suggest this discrepancy may arise from strain-induced patterns which appear when ultrathin crystals are deposited onto supports including silicon or glass. The team investigated 2D molybdenum disulfide surfaces with scanning probe microscopy to both record atomic-level topography and measure the transverse forces experienced by the moving probe tip. The resulting images revealed periodic frictional domains with geometries that suggest the presence of underlying surface ripples. These structures, which also appeared during scans of graphene and other films, can affect the electrical properties of 2D materials. We report on the anisotropic friction domains of MoS2 not only grown by chemical vapor deposition (CVD) under various sulfur pressure conditions, but also by mechanical exfoliation process. The 180° periodicity of each domain and the 60° shift between adjacent domains indicate the presence of linearly aligned structures along the armchair direction of MoS2. The universality of anisotropic frictional behaviors of 2D materials, including graphene, hBN, and WS2 with stacking honeycomb lattices supports our assumption based on linearly aligned ripples along the crystallographic axes, which result from an inhomogeneous strain field.

Slippery and Wear-Resistant Surfaces Enabled by Interface Engineered Graphene.

Abstract: Friction and wear remain the primary cause of mechanical energy dissipation and system failure. Recent studies reveal graphene as a powerful solid lubricant to combat friction and wear. Most of these studies have focused on nanoscale tribology and have been limited to a few specific surfaces. Here, we uncover many unknown aspects of graphene's contact-sliding at micro- and macroscopic tribo-scales over a broader range of surfaces. We discover that graphene's performance reduces for surfaces with increasing roughness. To overcome this, we introduce a new type of graphene/silicon nitride (SiNx, 3 nm) bilayer overcoats that exhibit superior performance compared to native graphene sheets (mono and bilayer), that is, display the lowest microscale friction and wear on a range of tribologically poor flat surfaces. More importantly, two-layer graphene/SiNx bilayer lubricant (<4 nm in total thickness) shows the highest macroscale wear durability on tape-head (topologically variant surface) that exceeds most previous thicker (∼7-100 nm) overcoats. Detailed nanoscale characterization and atomistic simulations explain the origin of the reduced friction and wear arising from these nanoscale coatings. Overall, this study demonstrates that engineered graphene-based coatings can outperform conventional coatings in a number of technologies.

Graphene roll-to-roll transfer method, graphene roll-to-roll transfer apparatus, and graphene roll

Abstract: PURPOSE: A graphene roll-to-roll transfer method is provided to enable easy transfer a large-sized graphene layer on a flexible substrate through roll-to-roll etching and/or transfer process. CONSTITUTION: A graphene roll-to-roll transfer method comprises the steps of: forming a laminate(50) including a material-graphene layer-first flexible substrate from a graphene layer(20) formed on a substrate(10) and the first flexible substrate(31) contacted with the graphene layer; and removing the substrate from the laminate and transferring the graphene layer on the first flexible substrate by impregnating the laminate in an etchant(60) using a second roller part(120).

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.